DMTH45M5LPDWQ-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 79A PWRDI50
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerDI5060-8 (Type UXD)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 978pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3W (Ta), 60W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.81 EUR |
| 5000+ | 0.77 EUR |
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Technische Details DMTH45M5LPDWQ-13 Diodes Incorporated
Description: MOSFET 2N-CH 40V 79A PWRDI50, Qualification: AEC-Q101, Grade: Automotive, Part Status: Active, Supplier Device Package: PowerDI5060-8 (Type UXD), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V, Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 978pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 79A (Tc), Drain to Source Voltage (Vdss): 40V, Power - Max: 3W (Ta), 60W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMTH45M5LPDWQ-13 nach Preis ab 0.94 EUR bis 2.97 EUR
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DMTH45M5LPDWQ-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 40V 79A PWRDI50 Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: PowerDI5060-8 (Type UXD) Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V Input Capacitance (Ciss) (Max) @ Vds: 978pF @ 20V Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 3W (Ta), 60W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 7519 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH45M5LPDWQ-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 40V 79A PWRDI50
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerDI5060-8 (Type UXD)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 978pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3W (Ta), 60W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 40V 79A PWRDI50
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerDI5060-8 (Type UXD)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 978pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3W (Ta), 60W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 7519 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 2.97 EUR |
| 10+ | 1.89 EUR |
| 100+ | 1.27 EUR |
| 500+ | 1.01 EUR |
| 1000+ | 0.94 EUR |