DMTH45M5LPDWQ-13 Diodes Zetex
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.78 EUR |
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Technische Details DMTH45M5LPDWQ-13 Diodes Zetex
Description: MOSFET BVDSS: 31V~40V POWERDI506, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W (Ta), 60W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 79A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 978pF @ 20V, Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V, FET Feature: Standard, Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type UXD), Part Status: Active.
Weitere Produktangebote DMTH45M5LPDWQ-13 nach Preis ab 1.06 EUR bis 2.32 EUR
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DMTH45M5LPDWQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI506 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 60W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 978pF @ 20V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UXD) Part Status: Active |
auf Bestellung 2425 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH45M5LPDWQ-13 | Hersteller : Diodes Inc |
 N Channel MOSFET Transistor |
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| DMTH45M5LPDWQ-13 | Hersteller : DIODES INCORPORATED | DMTH45M5LPDWQ-13 Multi channel transistors |
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DMTH45M5LPDWQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI506 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 60W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 978pF @ 20V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UXD) Part Status: Active |
Produkt ist nicht verfügbar |