DMTH45M5LPSWQ-13 Diodes Incorporated
auf Bestellung 3469 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.59 EUR |
| 10+ | 1.21 EUR |
| 100+ | 0.81 EUR |
| 500+ | 0.64 EUR |
| 1000+ | 0.58 EUR |
| 2500+ | 0.52 EUR |
| 5000+ | 0.5 EUR |
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Technische Details DMTH45M5LPSWQ-13 Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 86A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V, Power Dissipation (Max): 3.5W (Ta), 72W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type UX), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 20 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMTH45M5LPSWQ-13 nach Preis ab 0.58 EUR bis 1.97 EUR
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DMTH45M5LPSWQ-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET BVDSS: 31V~40V POWERDI506Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V Power Dissipation (Max): 3.5W (Ta), 72W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1880 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH45M5LPSWQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI506 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V Power Dissipation (Max): 3.5W (Ta), 72W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
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| DMTH45M5LPSWQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 86A; Idm: 344A; 72W Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 13.9nC On-state resistance: 5.5mΩ Power dissipation: 72W Drain current: 86A Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 344A Kind of package: 13 inch reel; tape Case: PowerDI5060-8 |
Produkt ist nicht verfügbar |