DMTH45M5LPSWQ-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8 (Type UX)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 72W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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Technische Details DMTH45M5LPSWQ-13 Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerDI5060-8 (Type UX), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Power Dissipation (Max): 3.5W (Ta), 72W (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 86A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMTH45M5LPSWQ-13 nach Preis ab 0.5 EUR bis 2.09 EUR
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DMTH45M5LPSWQ-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 31V-40V PowerDI5060-8/SWP T&R 2.5K |
auf Bestellung 3447 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH45M5LPSWQ-13 | Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI506 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerDI5060-8 (Type UX) Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 3.5W (Ta), 72W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 86A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 4360 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMTH45M5LPSWQ-13 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 31V-40V PowerDI5060-8/SWP T&R 2.5K
MOSFETs MOSFET BVDSS: 31V-40V PowerDI5060-8/SWP T&R 2.5K
auf Bestellung 3447 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.95 EUR |
| 10+ | 1.21 EUR |
| 100+ | 0.81 EUR |
| 500+ | 0.64 EUR |
| 1000+ | 0.58 EUR |
| 2500+ | 0.5 EUR |
| DMTH45M5LPSWQ-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8 (Type UX)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 72W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET BVDSS: 31V~40V POWERDI506
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8 (Type UX)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.5W (Ta), 72W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 4360 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.09 EUR |
| 14+ | 1.32 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.62 EUR |