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DMTH45M5LPSWQ-13

DMTH45M5LPSWQ-13 Diodes Incorporated

DMTH45M5LPSWQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.5W (Ta), 72W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.01 EUR
13+1.39 EUR
100+0.92 EUR
500+0.72 EUR
Mindestbestellmenge: 9
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Technische Details DMTH45M5LPSWQ-13 Diodes Incorporated

Description: MOSFET BVDSS: 31V~40V POWERDI506, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 86A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V, Power Dissipation (Max): 3.5W (Ta), 72W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type UX), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 20 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMTH45M5LPSWQ-13 nach Preis ab 0.52 EUR bis 1.70 EUR

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DMTH45M5LPSWQ-13 Hersteller : Diodes Incorporated DMTH45M5LPSWQ-3103749.pdf MOSFETs MOSFET BVDSS: 31V-40V PowerDI5060-8/SWP T&R 2.5K
auf Bestellung 4380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.70 EUR
10+1.32 EUR
100+0.89 EUR
500+0.71 EUR
1000+0.65 EUR
2500+0.58 EUR
5000+0.52 EUR
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DMTH45M5LPSWQ-13 Hersteller : DIODES INCORPORATED DMTH45M5LPSWQ.pdf DMTH45M5LPSWQ-13 SMD N channel transistors
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DMTH45M5LPSWQ-13 DMTH45M5LPSWQ-13 Hersteller : Diodes Incorporated DMTH45M5LPSWQ.pdf Description: MOSFET BVDSS: 31V~40V POWERDI506
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.5W (Ta), 72W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 978 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH