DMTH48M3SFVWQ-7 DIODES INCORPORATED
Hersteller: DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.3A; Idm: 209A; 2.82W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 12.1nC
On-state resistance: 8.9mΩ
Power dissipation: 2.82W
Drain current: 10.3A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 209A
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
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Technische Details DMTH48M3SFVWQ-7 DIODES INCORPORATED
Description: MOSFET BVDSS: 31V~40V POWERDI333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.4A (Tc), Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V, Power Dissipation (Max): 2.82W (Ta), 36.6W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote DMTH48M3SFVWQ-7
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Type-UX;-;-8.jpg "DMTH48M3SFVWQ-7") |
DMTH48M3SFVWQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V POWERDI333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.4A (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V Power Dissipation (Max): 2.82W (Ta), 36.6W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V Qualification: AEC-Q101 |
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DMTH48M3SFVWQ-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 31V~40V PowerDI3333-8/SWP T&R 2K |
Produkt ist nicht verfügbar |
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| DMTH48M3SFVWQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 10.3A; Idm: 209A; 2.82W Case: PowerDI3333-8 Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 12.1nC On-state resistance: 8.9mΩ Power dissipation: 2.82W Drain current: 10.3A Gate-source voltage: ±20V Drain-source voltage: 40V Pulsed drain current: 209A Application: automotive industry |
Produkt ist nicht verfügbar |