DMTH48M3SFVWQ-7 DIODES INCORPORATED
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details DMTH48M3SFVWQ-7 DIODES INCORPORATED
Description: MOSFET BVDSS: 31V~40V POWERDI333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.4A (Tc), Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V, Power Dissipation (Max): 2.82W (Ta), 36.6W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V, Qualification: AEC-Q101.
Weitere Produktangebote DMTH48M3SFVWQ-7
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
---|---|---|---|---|---|
![]() |
DMTH48M3SFVWQ-7 | Hersteller : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), 52.4A (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V Power Dissipation (Max): 2.82W (Ta), 36.6W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|
![]() |
DMTH48M3SFVWQ-7 | Hersteller : Diodes Incorporated |
![]() |
Produkt ist nicht verfügbar |