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DMTH4M40LPGW-13

DMTH4M40LPGW-13 Diodes Incorporated


Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI808
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700A (Tc)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 25A, 10V
Power Dissipation (Max): 4.6W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI8080-5
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16698 pF @ 20 V
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Technische Details DMTH4M40LPGW-13 Diodes Incorporated

Description: MOSFET BVDSS: 31V~40V POWERDI808, Packaging: Tape & Reel (TR), Package / Case: SOT-1235, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 700A (Tc), Rds On (Max) @ Id, Vgs: 0.4mOhm @ 25A, 10V, Power Dissipation (Max): 4.6W (Ta), 341W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI8080-5, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 16698 pF @ 20 V.

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DMTH4M40LPGW-13 Hersteller : Diodes Incorporated MOSFETs MOSFET BVDSS: 31V-40V PowerDI8080-5 T&R 2K
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