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DMTH4M70SPGWQ-13

DMTH4M70SPGWQ-13 Diodes Incorporated

DMTH4M70SPGWQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 31V~40V POWERDI808
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 460A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V
Power Dissipation (Max): 5.6W (Ta), 428W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI8080-5
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 117.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10053 pF @ 20 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+2.88 EUR
Mindestbestellmenge: 2000
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Technische Details DMTH4M70SPGWQ-13 Diodes Incorporated

Description: MOSFET BVDSS: 31V~40V POWERDI808, Packaging: Tape & Reel (TR), Package / Case: SOT-1235, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 460A (Tc), Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V, Power Dissipation (Max): 5.6W (Ta), 428W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerDI8080-5, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 117.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10053 pF @ 20 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20, Qualification: AEC-Q101.

Weitere Produktangebote DMTH4M70SPGWQ-13 nach Preis ab 3.06 EUR bis 8.79 EUR

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DMTH4M70SPGWQ-13 DMTH4M70SPGWQ-13 Hersteller : Diodes Incorporated DMTH4M70SPGWQ.pdf Description: MOSFET BVDSS: 31V~40V POWERDI808
Packaging: Cut Tape (CT)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 460A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V
Power Dissipation (Max): 5.6W (Ta), 428W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI8080-5
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 117.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10053 pF @ 20 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20
Qualification: AEC-Q101
auf Bestellung 4700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+5.91 EUR
10+ 4.97 EUR
100+ 4.02 EUR
500+ 3.57 EUR
1000+ 3.06 EUR
Mindestbestellmenge: 3
DMTH4M70SPGWQ-13 Hersteller : Diodes Incorporated DMTH4M70SPGWQ-3043370.pdf MOSFET MOSFET BVDSS: 31V~40V PowerDI8080-5 T&R 2K
auf Bestellung 1747 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
6+8.79 EUR
10+ 7.38 EUR
25+ 6.97 EUR
100+ 5.98 EUR
250+ 5.64 EUR
500+ 5.3 EUR
1000+ 4.55 EUR
Mindestbestellmenge: 6
DMTH4M70SPGWQ-13 Hersteller : Diodes Inc dmth4m70spgwq.pdf MOSFET BVDSS: 31V40V PowerDI8080-5 T&R 2K
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