DMTH4M70SPGWQ-13 Diodes Incorporated

Description: MOSFET BVDSS: 31V~40V POWERDI808, Packaging: Tape & Reel (TR), Package / Case: SOT-1235, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 460A (Tc), Rds On (Max) @ Id, Vgs: 0.7mOhm @ 25A, 10V, Power Dissipation (Max): 5.6W (Ta), 428W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerDI8080-5, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 117.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10053 pF @ 20 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20, Qualification: AEC-Q101.