DMTH6002LPS-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 60V 100A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 167W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 30 V
auf Bestellung 82500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.25 EUR |
| 5000+ | 1.21 EUR |
| 12500+ | 1.17 EUR |
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Technische Details DMTH6002LPS-13 Diodes Incorporated
Description: MOSFET N-CH 60V 100A PWRDI5060-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V, Power Dissipation (Max): 167W, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type K), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 130.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 30 V.
Weitere Produktangebote DMTH6002LPS-13 nach Preis ab 1.32 EUR bis 3.22 EUR
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DMTH6002LPS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 100A PWRDI5060-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Power Dissipation (Max): 167W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 30 V |
auf Bestellung 86052 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH6002LPS-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFETBVDSS: 41V-60V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6002LPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 145A; Idm: 820A; 3W Mounting: SMD Case: PowerDI5060-8 Pulsed drain current: 820A Power dissipation: 3W Gate charge: 130.8nC Polarisation: unipolar Drain current: 145A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 3.3mΩ Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH6002LPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 145A; Idm: 820A; 3W Mounting: SMD Case: PowerDI5060-8 Pulsed drain current: 820A Power dissipation: 3W Gate charge: 130.8nC Polarisation: unipolar Drain current: 145A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 3.3mΩ |
Produkt ist nicht verfügbar |