| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.32 EUR |
| 10+ | 2.92 EUR |
| 100+ | 2.12 EUR |
| 500+ | 1.69 EUR |
| 1000+ | 1.58 EUR |
| 2500+ | 1.42 EUR |
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Technische Details DMTH6004LPSQ-13 Diodes Incorporated
Description: MOSFET N-CH 60V 100A PWRDI5060-8, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 47.4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: PowerDI5060-8, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.6W (Ta), 138W (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMTH6004LPSQ-13 nach Preis ab 1.59 EUR bis 4.93 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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DMTH6004LPSQ-13 | Diodes Incorporated |
 Description: MOSFET N-CH 60V 100A PWRDI5060-8Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 47.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.6W (Ta), 138W (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 1895 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMTH6004LPSQ-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 100A PWRDI5060-8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 47.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.6W (Ta), 138W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 100A PWRDI5060-8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 47.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.6W (Ta), 138W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 1895 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.93 EUR |
| 10+ | 3.17 EUR |
| 100+ | 2.17 EUR |
| 500+ | 1.74 EUR |
| 1000+ | 1.59 EUR |