auf Bestellung 2469 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.73 EUR |
| 10+ | 2.29 EUR |
| 100+ | 1.81 EUR |
| 500+ | 1.53 EUR |
| 1000+ | 1.30 EUR |
| 2500+ | 1.23 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMTH6004LPSQ-13 Diodes Incorporated
Description: MOSFET N-CH 60V 100A PWRDI5060-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V, Power Dissipation (Max): 2.6W (Ta), 138W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 47.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote DMTH6004LPSQ-13 nach Preis ab 1.34 EUR bis 4.14 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMTH6004LPSQ-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 60V 100A PWRDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V Power Dissipation (Max): 2.6W (Ta), 138W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 47.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 1895 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
| DMTH6004LPSQ-13 | Hersteller : DIODES INCORPORATED |
DMTH6004LPSQ-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||
|
|
DMTH6004LPSQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 100A PWRDI5060-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V Power Dissipation (Max): 2.6W (Ta), 138W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 47.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |