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DMTH6004SCT

DMTH6004SCT Diodes Incorporated

DMTH6004SCT.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.65mOhm @ 100A, 10V
Power Dissipation (Max): 2.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
auf Bestellung 5550 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+2.42 EUR
Mindestbestellmenge: 50
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Technische Details DMTH6004SCT Diodes Incorporated

Description: MOSFET N-CH 60V 100A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.65mOhm @ 100A, 10V, Power Dissipation (Max): 2.8W (Ta), 136W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V.

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DMTH6004SCT DMTH6004SCT Hersteller : Diodes Incorporated DMTH6004SCT.pdf MOSFETs MOSFET BVDSS:
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.15 EUR
10+2.20 EUR
100+1.90 EUR
250+1.88 EUR
2500+1.87 EUR
5000+1.85 EUR
Im Einkaufswagen  Stück im Wert von  UAH