DMTH6004SK3-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 100A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 100A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
Power Dissipation (Max): 3.9W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1625 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.02 EUR |
11+ | 1.65 EUR |
100+ | 1.29 EUR |
500+ | 1.09 EUR |
1000+ | 0.89 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMTH6004SK3-13 Diodes Incorporated
Description: MOSFET N-CH 60V 100A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V, Power Dissipation (Max): 3.9W (Ta), 180W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMTH6004SK3-13 nach Preis ab 1.19 EUR bis 3.04 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
DMTH6004SK3-13 | Hersteller : Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V |
auf Bestellung 86046 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||
DMTH6004SK3-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMTH6004SK3-13 - Leistungs-MOSFET, n-Kanal, 60 V, 100 A, 0.003 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 180W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.003ohm SVHC: Lead (14-Jun-2023) |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||
DMTH6004SK3-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMTH6004SK3-13 - Leistungs-MOSFET, n-Kanal, 60 V, 100 A, 0.003 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 180W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.003ohm SVHC: Lead (14-Jun-2023) |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||
DMTH6004SK3-13 | Hersteller : Diodes Inc | Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
||||||||||||||||
DMTH6004SK3-13 | Hersteller : Diodes Zetex | Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
||||||||||||||||
DMTH6004SK3-13 | Hersteller : Diodes Zetex | Trans MOSFET N-CH 60V 100A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
||||||||||||||||
DMTH6004SK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 150A; 3.9W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 75A Pulsed drain current: 150A Power dissipation: 3.9W Case: TO252 Gate-source voltage: ±20V On-state resistance: 3.8mΩ Mounting: SMD Gate charge: 95.4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
DMTH6004SK3-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 100A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V Power Dissipation (Max): 3.9W (Ta), 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
||||||||||||||||
DMTH6004SK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 150A; 3.9W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 75A Pulsed drain current: 150A Power dissipation: 3.9W Case: TO252 Gate-source voltage: ±20V On-state resistance: 3.8mΩ Mounting: SMD Gate charge: 95.4nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |