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DMTH6009LK3Q-13 Diodes Incorporated


DMTH6009LK3Q.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 14.2A/59A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 60W (Tc)
auf Bestellung 62500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.8 EUR
5000+0.77 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMTH6009LK3Q-13 Diodes Incorporated

Description: MOSFET N-CH 60V 14.2A/59A TO252, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 59A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-252-3, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 3.2W (Ta), 60W (Tc).

Weitere Produktangebote DMTH6009LK3Q-13 nach Preis ab 0.83 EUR bis 3.01 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
DMTH6009LK3Q-13 DMTH6009LK3Q-13 Diodes Incorporated DMTH6009LK3Q.pdf Description: MOSFET N-CH 60V 14.2A/59A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 63979 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.02 EUR
11+1.62 EUR
100+1.14 EUR
500+0.96 EUR
1000+0.88 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMTH6009LK3Q-13 DMTH6009LK3Q-13 Diodes Incorporated DMTH6009LK3.pdf MOSFETs N-Ch Enh Mode Fet 60Vdss 20Vgss 60W
auf Bestellung 10861 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.01 EUR
10+1.88 EUR
100+1.29 EUR
500+1.02 EUR
1000+0.94 EUR
2500+0.84 EUR
5000+0.83 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DMTH6009LK3Q-13 DMTH6009LK3Q.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 14.2A/59A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 63979 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
9+2.02 EUR
11+1.62 EUR
100+1.14 EUR
500+0.96 EUR
1000+0.88 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMTH6009LK3Q-13 DMTH6009LK3.pdf
Hersteller: Diodes Incorporated
MOSFETs N-Ch Enh Mode Fet 60Vdss 20Vgss 60W
auf Bestellung 10861 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+3.01 EUR
10+1.88 EUR
100+1.29 EUR
500+1.02 EUR
1000+0.94 EUR
2500+0.84 EUR
5000+0.83 EUR
Im Einkaufswagen  Stück im Wert von  UAH