Technische Details DMTH6009LK3Q-13 Diodes Zetex
Description: MOSFET N-CH 60V 14.2A/59A TO252, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 59A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-252-3, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 3.2W (Ta), 60W (Tc).
Weitere Produktangebote DMTH6009LK3Q-13 nach Preis ab 0.77 EUR bis 3.58 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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DMTH6009LK3Q-13 | Diodes Zetex |
 Trans MOSFET N-CH 60V 14.2A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 182500 Stücke: Lieferzeit 14-21 Tag (e) |
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DMTH6009LK3Q-13 | Diodes Zetex |
Trans MOSFET N-CH 60V 14.2A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 57500 Stücke: Lieferzeit 14-21 Tag (e) |
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DMTH6009LK3Q-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 14.2A/59A TO252 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 59A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-252-3 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.2W (Ta), 60W (Tc) |
auf Bestellung 62500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH6009LK3Q-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 14.2A/59A TO252 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-252-3 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.2W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 59A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 63979 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH6009LK3Q-13 | DIODES INC. |
Description: DIODES INC. - DMTH6009LK3Q-13 - Leistungs-MOSFET, n-Kanal, 60 V, 59 A, 0.0083 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 59A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 3.2W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0083ohm SVHC: No SVHC (15-Jan-2018) |
auf Bestellung 2218 Stücke: Lieferzeit 14-21 Tag (e) |
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DMTH6009LK3Q-13 | DIODES INC. |
Description: DIODES INC. - DMTH6009LK3Q-13 - Leistungs-MOSFET, n-Kanal, 60 V, 59 A, 0.0083 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 59A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 3.2W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0083ohm SVHC: No SVHC (15-Jan-2018) |
auf Bestellung 2218 Stücke: Lieferzeit 14-21 Tag (e) |
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DMTH6009LK3Q-13 | Diodes Incorporated |
MOSFETs N-Ch Enh Mode Fet 60Vdss 20Vgss 60W |
auf Bestellung 10861 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6009LK3Q-13 |
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Hersteller: Diodes Zetex
Trans MOSFET N-CH 60V 14.2A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 60V 14.2A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
auf Bestellung 182500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.81 EUR |
| 5000+ | 0.77 EUR |
| DMTH6009LK3Q-13 |
|
Hersteller: Diodes Zetex
Trans MOSFET N-CH 60V 14.2A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 60V 14.2A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
auf Bestellung 57500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.83 EUR |
| DMTH6009LK3Q-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 14.2A/59A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 60W (Tc)
Description: MOSFET N-CH 60V 14.2A/59A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 60W (Tc)
auf Bestellung 62500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.95 EUR |
| 5000+ | 0.92 EUR |
| DMTH6009LK3Q-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 14.2A/59A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 14.2A/59A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 59A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 63979 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.4 EUR |
| 11+ | 1.93 EUR |
| 100+ | 1.36 EUR |
| 500+ | 1.14 EUR |
| 1000+ | 1.05 EUR |
| DMTH6009LK3Q-13 |
|
Hersteller: DIODES INC.
Description: DIODES INC. - DMTH6009LK3Q-13 - Leistungs-MOSFET, n-Kanal, 60 V, 59 A, 0.0083 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 59A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.4V
euEccn: NLR
Verlustleistung: 3.2W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0083ohm
SVHC: No SVHC (15-Jan-2018)
Description: DIODES INC. - DMTH6009LK3Q-13 - Leistungs-MOSFET, n-Kanal, 60 V, 59 A, 0.0083 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 59A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.4V
euEccn: NLR
Verlustleistung: 3.2W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0083ohm
SVHC: No SVHC (15-Jan-2018)
auf Bestellung 2218 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 86+ | 2.93 EUR |
| 107+ | 2.17 EUR |
| 153+ | 1.4 EUR |
| 500+ | 1.36 EUR |
| 1000+ | 1.3 EUR |
| DMTH6009LK3Q-13 |
|
Hersteller: DIODES INC.
Description: DIODES INC. - DMTH6009LK3Q-13 - Leistungs-MOSFET, n-Kanal, 60 V, 59 A, 0.0083 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 59A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.4V
euEccn: NLR
Verlustleistung: 3.2W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0083ohm
SVHC: No SVHC (15-Jan-2018)
Description: DIODES INC. - DMTH6009LK3Q-13 - Leistungs-MOSFET, n-Kanal, 60 V, 59 A, 0.0083 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 59A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.4V
euEccn: NLR
Verlustleistung: 3.2W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0083ohm
SVHC: No SVHC (15-Jan-2018)
auf Bestellung 2218 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 2.93 EUR |
| 107+ | 2.17 EUR |
| 153+ | 1.4 EUR |
| 500+ | 1.36 EUR |
| 1000+ | 1.3 EUR |
| DMTH6009LK3Q-13 |
|
Hersteller: Diodes Incorporated
MOSFETs N-Ch Enh Mode Fet 60Vdss 20Vgss 60W
MOSFETs N-Ch Enh Mode Fet 60Vdss 20Vgss 60W
auf Bestellung 10861 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.58 EUR |
| 10+ | 2.24 EUR |
| 100+ | 1.54 EUR |
| 500+ | 1.21 EUR |
| 1000+ | 1.12 EUR |
| 2500+ | 1 EUR |
| 5000+ | 0.99 EUR |