DMTH6009LPS-13 Diodes Zetex
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.52 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
2500 Stücke
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Produktbewertung abgeben
Technische Details DMTH6009LPS-13 Diodes Zetex
Description: MOSFET N-CH 60V PWRDI5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.76A (Ta), 89.5A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V, Power Dissipation (Max): 2.8W (Ta), 136W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PowerDI5060-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote DMTH6009LPS-13 nach Preis ab 0.6 EUR bis 2.56 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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DMTH6009LPS-13 | Diodes Incorporated |
 Description: MOSFET N-CH 60V PWRDI5060Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.76A (Ta), 89.5A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 2.8W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH6009LPS-13 | DIODES INC. |
Description: DIODES INC. - DMTH6009LPS-13 - Leistungs-MOSFET, n-Kanal, 60 V, 89.5 A, 7200 µohm, PowerDI 5060, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 89.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 136W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 7200µohm SVHC: Lead (25-Jun-2025) |
auf Bestellung 2299 Stücke: Lieferzeit 14-21 Tag (e) |
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DMTH6009LPS-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60V |
auf Bestellung 2619 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH6009LPS-13 | DIODES INC. |
Description: DIODES INC. - DMTH6009LPS-13 - Leistungs-MOSFET, n-Kanal, 60 V, 89.5 A, 7200 µohm, PowerDI 5060, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 89.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 136W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 7200µohm SVHC: Lead (27-Jun-2024) |
auf Bestellung 2309 Stücke: Lieferzeit 14-21 Tag (e) |
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DMTH6009LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V PWRDI5060 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.76A (Ta), 89.5A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 2.8W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 4132 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6009LPS-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.76A (Ta), 89.5A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.76A (Ta), 89.5A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.67 EUR |
| DMTH6009LPS-13 |
|
Hersteller: DIODES INC.
Description: DIODES INC. - DMTH6009LPS-13 - Leistungs-MOSFET, n-Kanal, 60 V, 89.5 A, 7200 µohm, PowerDI 5060, Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 89.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 136W
Bauform - Transistor: PowerDI 5060
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 7200µohm
SVHC: Lead (25-Jun-2025)
Description: DIODES INC. - DMTH6009LPS-13 - Leistungs-MOSFET, n-Kanal, 60 V, 89.5 A, 7200 µohm, PowerDI 5060, Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 89.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 136W
Bauform - Transistor: PowerDI 5060
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 7200µohm
SVHC: Lead (25-Jun-2025)
auf Bestellung 2299 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 110+ | 2.28 EUR |
| 168+ | 1.38 EUR |
| 244+ | 0.88 EUR |
| 500+ | 0.65 EUR |
| 1000+ | 0.6 EUR |
| DMTH6009LPS-13 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 41V-60V
MOSFETs MOSFET BVDSS: 41V-60V
auf Bestellung 2619 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.51 EUR |
| 10+ | 1.17 EUR |
| 100+ | 1.04 EUR |
| DMTH6009LPS-13 |
|
Hersteller: DIODES INC.
Description: DIODES INC. - DMTH6009LPS-13 - Leistungs-MOSFET, n-Kanal, 60 V, 89.5 A, 7200 µohm, PowerDI 5060, Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 89.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 136W
Bauform - Transistor: PowerDI 5060
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 7200µohm
SVHC: Lead (27-Jun-2024)
Description: DIODES INC. - DMTH6009LPS-13 - Leistungs-MOSFET, n-Kanal, 60 V, 89.5 A, 7200 µohm, PowerDI 5060, Oberflächenmontage
tariffCode: 85411000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 89.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 136W
Bauform - Transistor: PowerDI 5060
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 7200µohm
SVHC: Lead (27-Jun-2024)
auf Bestellung 2309 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 2.52 EUR |
| 151+ | 1.54 EUR |
| 220+ | 0.98 EUR |
| 500+ | 0.79 EUR |
| 1000+ | 0.71 EUR |
| DMTH6009LPS-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.76A (Ta), 89.5A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.76A (Ta), 89.5A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 4132 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.56 EUR |
| 14+ | 1.61 EUR |
| 25+ | 1.36 EUR |
| 50+ | 1.19 EUR |
| 100+ | 1.06 EUR |