DMTH6010LPDQ-13 Diodes Zetex
auf Bestellung 1307500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.85 EUR |
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Technische Details DMTH6010LPDQ-13 Diodes Zetex
Description: MOSFET 2N-CH 60V 13.1A PWRDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.8W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 47.6A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2615pF @ 30V, Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 40.2nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI5060-8, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMTH6010LPDQ-13 nach Preis ab 0.97 EUR bis 3.50 EUR
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DMTH6010LPDQ-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET 2N-CH 60V 13.1A PWRDI50Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.8W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 47.6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2615pF @ 30V Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 40.2nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1322500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH6010LPDQ-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 13.1A 8-Pin PowerDI EP T/R Automotive AEC-Q101 |
auf Bestellung 145 Stücke: Lieferzeit 14-21 Tag (e) |
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DMTH6010LPDQ-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 13.1A 8-Pin PowerDI EP T/R Automotive AEC-Q101 |
auf Bestellung 145 Stücke: Lieferzeit 14-21 Tag (e) |
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DMTH6010LPDQ-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60V |
auf Bestellung 6268 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH6010LPDQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 60V 13.1A PWRDI50 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.8W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 47.6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2615pF @ 30V Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 40.2nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1324056 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH6010LPDQ-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 13.1A 8-Pin PowerDI EP T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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| DMTH6010LPDQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10.9A; Idm: 170A; 2.8W Case: PowerDI5060-8 Mounting: SMD Kind of package: 13 inch reel; tape Gate-source voltage: ±20V Pulsed drain current: 170A Drain-source voltage: 60V Drain current: 10.9A On-state resistance: 16mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 2.8W Polarisation: unipolar Gate charge: 40.2nC Kind of channel: enhancement Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMTH6010LPDQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10.9A; Idm: 170A; 2.8W Case: PowerDI5060-8 Mounting: SMD Kind of package: 13 inch reel; tape Gate-source voltage: ±20V Pulsed drain current: 170A Drain-source voltage: 60V Drain current: 10.9A On-state resistance: 16mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 2.8W Polarisation: unipolar Gate charge: 40.2nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |