auf Bestellung 2011 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.90 EUR |
| 10+ | 1.55 EUR |
| 100+ | 1.08 EUR |
| 500+ | 0.88 EUR |
| 1000+ | 0.81 EUR |
| 2500+ | 0.79 EUR |
| 5000+ | 0.77 EUR |
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Technische Details DMTH6010SK3Q-13 Diodes Incorporated
Description: MOSFET N-CH 60V 16.3A/70A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 38.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2841 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote DMTH6010SK3Q-13 nach Preis ab 0.86 EUR bis 1.95 EUR
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DMTH6010SK3Q-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 60V 16.3A/70A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 38.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2841 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 2285 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6010SK3Q-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 13.6A; Idm: 280A; 3.1W; TO252 Case: TO252 Mounting: SMD Power dissipation: 3.1W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 38.1nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 280A Drain-source voltage: 60V Drain current: 13.6A On-state resistance: 8mΩ Type of transistor: N-MOSFET Application: automotive industry Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMTH6010SK3Q-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 16.3A/70A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 38.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2841 pF @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| DMTH6010SK3Q-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 13.6A; Idm: 280A; 3.1W; TO252 Case: TO252 Mounting: SMD Power dissipation: 3.1W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 38.1nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 280A Drain-source voltage: 60V Drain current: 13.6A On-state resistance: 8mΩ Type of transistor: N-MOSFET Application: automotive industry |
Produkt ist nicht verfügbar |