DMTH6012LPSW-13 Diodes Zetex
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.31 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMTH6012LPSW-13 Diodes Zetex
Description: MOSFET N-CH 60V 11.5/50.5A PWRDI, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50.5A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V, Power Dissipation (Max): 2.8W (Ta), 53.6W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type Q), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V.
Weitere Produktangebote DMTH6012LPSW-13 nach Preis ab 0.33 EUR bis 0.39 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMTH6012LPSW-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 60V 11.5/50.5A PWRDIPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50.5A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V Power Dissipation (Max): 2.8W (Ta), 53.6W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type Q) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
DMTH6012LPSW-13 | Hersteller : Diodes Zetex |
60V +175 Degrees N-Channel Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |
|||||||||||
| DMTH6012LPSW-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.1A; Idm: 200A; 2.8W Mounting: SMD Gate charge: 13.6nC Drain-source voltage: 60V Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 200A Kind of package: 13 inch reel; tape Case: PowerDI5060-8 Polarisation: unipolar Power dissipation: 2.8W Type of transistor: N-MOSFET On-state resistance: 21mΩ Drain current: 8.1A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
 |
DMTH6012LPSW-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V~60V PowerDI5060-8/SWP T&R 2.5K |
Produkt ist nicht verfügbar |
|||||||||||
| DMTH6012LPSW-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.1A; Idm: 200A; 2.8W Mounting: SMD Gate charge: 13.6nC Drain-source voltage: 60V Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 200A Kind of package: 13 inch reel; tape Case: PowerDI5060-8 Polarisation: unipolar Power dissipation: 2.8W Type of transistor: N-MOSFET On-state resistance: 21mΩ Drain current: 8.1A |
Produkt ist nicht verfügbar |