Technische Details DMTH6012LPSW-13 Diodes Zetex
Description: MOSFET N-CH 60V 11.5/50.5A PWRDI, Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerDI5060-8 (Type Q), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Power Dissipation (Max): 2.8W (Ta), 53.6W (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMTH6012LPSW-13 nach Preis ab 0.38 EUR bis 0.45 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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DMTH6012LPSW-13 | Diodes Incorporated |
 Description: MOSFET N-CH 60V 11.5/50.5A PWRDIInput Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerDI5060-8 (Type Q) Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 2.8W (Ta), 53.6W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6012LPSW-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 11.5/50.5A PWRDI
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI5060-8 (Type Q)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 53.6W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 11.5/50.5A PWRDI
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerDI5060-8 (Type Q)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 53.6W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.45 EUR |
| 5000+ | 0.42 EUR |
| 7500+ | 0.4 EUR |
| 12500+ | 0.38 EUR |