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DMTH6012LPSWQ-13

DMTH6012LPSWQ-13 Diodes Incorporated

DMTH6012LPSWQ.pdf Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 41V-60V PowerDI5060-8/SWP T&R 2.5K
auf Bestellung 2154 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.42 EUR
10+0.97 EUR
100+0.66 EUR
500+0.54 EUR
1000+0.49 EUR
2500+0.42 EUR
5000+0.41 EUR
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Technische Details DMTH6012LPSWQ-13 Diodes Incorporated

Description: MOSFET N-CH 60V 11.5/50.5A PWRDI, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50.5A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V, Power Dissipation (Max): 2.8W (Ta), 53.6W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type Q), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V, Qualification: AEC-Q101.

Weitere Produktangebote DMTH6012LPSWQ-13 nach Preis ab 0.48 EUR bis 1.67 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMTH6012LPSWQ-13 DMTH6012LPSWQ-13 Hersteller : Diodes Incorporated DMTH6012LPSWQ.pdf Description: MOSFET N-CH 60V 11.5/50.5A PWRDI
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50.5A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 53.6W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 1030 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.67 EUR
17+1.05 EUR
100+0.69 EUR
500+0.53 EUR
1000+0.48 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
DMTH6012LPSWQ-13 DMTH6012LPSWQ-13 Hersteller : Diodes Incorporated DMTH6012LPSWQ.pdf Description: MOSFET N-CH 60V 11.5/50.5A PWRDI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50.5A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 2.8W (Ta), 53.6W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type Q)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
Qualification: AEC-Q101
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