DMTH6015LPDWQ-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 60V 9.4A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta), 39.5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 36.3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UXD)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 628 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.05 EUR |
| 14+ | 1.29 EUR |
| 100+ | 0.86 EUR |
| 500+ | 0.67 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMTH6015LPDWQ-13 Diodes Incorporated
Description: MOSFET 2N-CH 60V 9.4A PWRDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.6W (Ta), 39.5W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 36.3A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V, Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type UXD), Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMTH6015LPDWQ-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| DMTH6015LPDWQ-13 | Hersteller : Diodes Inc |
Dual N-Channel Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |
||
|
|
DMTH6015LPDWQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 60V 9.4A PWRDI50 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.6W (Ta), 39.5W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 36.3A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UXD) Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |