DMTH6016LK3-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 60V 10.8 TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 46.9A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.28 EUR |
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Technische Details DMTH6016LK3-13 Diodes Incorporated
Description: MOSFET N-CH 60V 10.8 TO252 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 46.9A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V, Power Dissipation (Max): 3.2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252 (DPAK), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote DMTH6016LK3-13 nach Preis ab 0.27 EUR bis 2.39 EUR
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DMTH6016LK3-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 41V-60V |
auf Bestellung 8226 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH6016LK3-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 10.8 TO252 T&R Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 46.9A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 4617 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH6016LK3-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 60V 10.8A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6016LK3-13 | Hersteller : Diodes Incorporated |
Транз. Пол. БММ N-MOSFET TO252(DPAK) Udss=60V; Id=46A; Rds=0,017 Ohm |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6016LK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 70A; 3.2W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.6A Pulsed drain current: 70A Power dissipation: 3.2W Case: TO252 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMTH6016LK3-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7.6A; Idm: 70A; 3.2W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.6A Pulsed drain current: 70A Power dissipation: 3.2W Case: TO252 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |