DMTH6016LK3Q-13 Diodes Zetex
auf Bestellung 185000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.38 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMTH6016LK3Q-13 Diodes Zetex
Description: MOSFET N-CH 60V 10.8 TO252 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 46.9A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V, Power Dissipation (Max): 3.2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252, (D-Pak), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V.
Weitere Produktangebote DMTH6016LK3Q-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
DMTH6016LK3Q-13 | Hersteller : Diodes Incorporated |
 MOSFET MOSFET BVDSS: 41V-60V |
auf Bestellung 1900 Stücke: Lieferzeit 10-14 Tag (e) |
|
|
|
DMTH6016LK3Q-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 10.8A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|
| DMTH6016LK3Q-13 | Hersteller : DIODES INCORPORATED |
DMTH6016LK3Q-13 SMD N channel transistors |
Produkt ist nicht verfügbar |
||
 |
DMTH6016LK3Q-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 10.8 TO252 T&R Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta), 46.9A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252, (D-Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V |
Produkt ist nicht verfügbar |