Technische Details DMTH61M5SPSWQ-13 Diodes Inc
Description: MOSFET BVDSS: 41V~60V POWERDI506, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 225A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V, Power Dissipation (Max): 3.2W (Ta), 167W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerDI5060-8 (SWP), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote DMTH61M5SPSWQ-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| DMTH61M5SPSWQ-13 | Hersteller : DIODES INCORPORATED |
 DMTH61M5SPSWQ-13 SMD N channel transistors |
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| DMTH61M5SPSWQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 41V~60V POWERDI506 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 225A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V Power Dissipation (Max): 3.2W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 (SWP) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| DMTH61M5SPSWQ-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 41V-60V PowerDI5060-8 T&R 2.5K |
Produkt ist nicht verfügbar |