DMTH61M5SPSWQ-13 Diodes Incorporated

Description: MOSFET BVDSS: 41V~60V POWERDI506, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 8306 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 130.6 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: PowerDI5060-8 (SWP), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.2W (Ta), 167W (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 225A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN.