DMTH69M8LFVWQ-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET BVDSS: 41V-60V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 45.4A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.6W (Ta), 29.4W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.46 EUR |
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Technische Details DMTH69M8LFVWQ-7 Diodes Incorporated
Description: MOSFET BVDSS: 41V-60V POWERDI333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 45.4A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V, Power Dissipation (Max): 3.6W (Ta), 29.4W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote DMTH69M8LFVWQ-7 nach Preis ab 0.51 EUR bis 1.76 EUR
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DMTH69M8LFVWQ-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 41V 60V PowerDI3333-8/SWP T&R 2K |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMTH69M8LFVWQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 41V-60V POWERDI333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 45.4A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V Power Dissipation (Max): 3.6W (Ta), 29.4W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 3145 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH69M8LFVWQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11.2A; Idm: 180A; 3.6W Mounting: SMD Drain-source voltage: 60V Drain current: 11.2A On-state resistance: 13.3mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 3.6W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 33.5nC Kind of channel: enhancement Gate-source voltage: ±16V Case: PowerDI3333-8 Pulsed drain current: 180A Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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| DMTH69M8LFVWQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11.2A; Idm: 180A; 3.6W Mounting: SMD Drain-source voltage: 60V Drain current: 11.2A On-state resistance: 13.3mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 3.6W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 33.5nC Kind of channel: enhancement Gate-source voltage: ±16V Case: PowerDI3333-8 Pulsed drain current: 180A |
Produkt ist nicht verfügbar |