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DMTH8001STLWQ-13

DMTH8001STLWQ-13 Diodes Zetex


dmth8001stlwq.pdf Hersteller: Diodes Zetex
Diodes Incorporated offers a portfolio of automotive MOSFETs packaged in the space saving, thermally efficient TOLL (PD1012S) package.
auf Bestellung 21000 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
1500+3.54 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMTH8001STLWQ-13 Diodes Zetex

Description: MOSFET BVDSS: 61V~100V POWERDI10, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 270A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V, Power Dissipation (Max): 6W (Ta), 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: POWERDI1012-8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8894 pF @ 50 V, Qualification: AEC-Q101.

Weitere Produktangebote DMTH8001STLWQ-13 nach Preis ab 4.17 EUR bis 9.08 EUR

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DMTH8001STLWQ-13 DMTH8001STLWQ-13 Hersteller : Diodes Incorporated DMTH8001STLWQ.pdf Description: MOSFET BVDSS: 61V~100V POWERDI10
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 6W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: POWERDI1012-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8894 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+4.17 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
DMTH8001STLWQ-13 DMTH8001STLWQ-13 Hersteller : Diodes Incorporated DMTH8001STLWQ.pdf MOSFETs MOSFET BVDSS: 61V~100V PowerDI1012-8 T&R 1.5K
auf Bestellung 1685 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.73 EUR
10+6.32 EUR
100+4.59 EUR
1000+4.44 EUR
1500+4.21 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DMTH8001STLWQ-13 DMTH8001STLWQ-13 Hersteller : Diodes Incorporated DMTH8001STLWQ.pdf Description: MOSFET BVDSS: 61V~100V POWERDI10
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 6W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: POWERDI1012-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8894 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 10513 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.08 EUR
10+6.32 EUR
100+4.56 EUR
500+4.55 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
DMTH8001STLWQ-13 DMTH8001STLWQ-13 Hersteller : Diodes Zetex dmth8001stlwq.pdf Diodes Incorporated offers a portfolio of automotive MOSFETs packaged in the space saving, thermally efficient TOLL (PD1012S) package.
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMTH8001STLWQ-13 Hersteller : DIODES INCORPORATED DMTH8001STLWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 270A; Idm: 1080A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 270A
Pulsed drain current: 1.08kA
Power dissipation: 250W
Case: PowerDI1012-8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 138nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMTH8001STLWQ-13 Hersteller : DIODES INCORPORATED DMTH8001STLWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 270A; Idm: 1080A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 270A
Pulsed drain current: 1.08kA
Power dissipation: 250W
Case: PowerDI1012-8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 138nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH