DMTH8001STLWQ-13 Diodes Incorporated
| Anzahl | Preis |
|---|---|
| 1+ | 8.94 EUR |
| 10+ | 6.37 EUR |
| 100+ | 4.59 EUR |
| 1000+ | 4.29 EUR |
| 1500+ | 3.91 EUR |
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Technische Details DMTH8001STLWQ-13 Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI10, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 270A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V, Power Dissipation (Max): 6W (Ta), 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: POWERDI1012-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8894 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMTH8001STLWQ-13 nach Preis ab 4.58 EUR bis 10.12 EUR
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DMTH8001STLWQ-13 | Diodes Incorporated |
 Description: MOSFET BVDSS: 61V~100V POWERDI10Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 270A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V Power Dissipation (Max): 6W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: POWERDI1012-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8894 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 863 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH8001STLWQ-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI10
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 6W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: POWERDI1012-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8894 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET BVDSS: 61V~100V POWERDI10
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 6W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: POWERDI1012-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8894 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 863 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 10.12 EUR |
| 10+ | 6.79 EUR |
| 100+ | 4.91 EUR |
| 500+ | 4.58 EUR |