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DMTH8028LFVWQ-13 Diodes Incorporated


DMTH8028LFVWQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33
Grade: Automotive
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 631 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 708000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.49 EUR
6000+0.45 EUR
9000+0.44 EUR
15000+0.43 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMTH8028LFVWQ-13 Diodes Incorporated

Description: MOSFET BVDSS: 61V~100V POWERDI33, Grade: Automotive, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.5W (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 631 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V.

Weitere Produktangebote DMTH8028LFVWQ-13 nach Preis ab 0.58 EUR bis 2.03 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
DMTH8028LFVWQ-13 DMTH8028LFVWQ-13 Diodes Incorporated DMTH8028LFVWQ.pdf Description: MOSFET BVDSS: 61V~100V POWERDI33
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 631 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 709235 Stücke:
Lieferzeit 10-14 Tag (e)
11+2.03 EUR
17+1.27 EUR
100+0.83 EUR
500+0.64 EUR
1000+0.58 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMTH8028LFVWQ-13 DMTH8028LFVWQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V POWERDI33
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 631 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 709235 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.03 EUR
17+1.27 EUR
100+0.83 EUR
500+0.64 EUR
1000+0.58 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH