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DMTH8028LPSW-13 DIODES INCORPORATED


DMTH8028LPSW.pdf Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 29.5A; Idm: 166.8A; 3.9W
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: 13 inch reel; tape
Gate-source voltage: ±20V
Kind of channel: enhancement
Drain-source voltage: 80V
Pulsed drain current: 166.8A
Drain current: 29.5A
Gate charge: 10.4nC
On-state resistance: 41mΩ
Polarisation: unipolar
Case: PowerDI5060-8
Power dissipation: 3.9W
Anzahl je Verpackung: 2500 Stücke
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Technische Details DMTH8028LPSW-13 DIODES INCORPORATED

Description: MOSFET BVDSS: 61V~100V POWERDI50, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41.7A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V, Power Dissipation (Max): 3.9W (Ta), 65W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type UX), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 25 V.

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DMTH8028LPSW-13 DMTH8028LPSW-13 Hersteller : Diodes Incorporated DMTH8028LPSW.pdf Description: MOSFET BVDSS: 61V~100V POWERDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41.7A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Power Dissipation (Max): 3.9W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type UX)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 25 V
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DMTH8028LPSW-13 Hersteller : Diodes Incorporated DMTH8028LPSW-3104137.pdf MOSFETs MOSFET BVDSS: 61V~100V PowerDI5060-8/SWP T&R 2.5K
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DMTH8028LPSW-13 Hersteller : DIODES INCORPORATED DMTH8028LPSW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 29.5A; Idm: 166.8A; 3.9W
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: 13 inch reel; tape
Gate-source voltage: ±20V
Kind of channel: enhancement
Drain-source voltage: 80V
Pulsed drain current: 166.8A
Drain current: 29.5A
Gate charge: 10.4nC
On-state resistance: 41mΩ
Polarisation: unipolar
Case: PowerDI5060-8
Power dissipation: 3.9W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH