
DMWS120H100SM4 Diodes Incorporated
auf Bestellung 55 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 31.66 EUR |
10+ | 31.64 EUR |
30+ | 23.90 EUR |
60+ | 21.12 EUR |
120+ | 20.72 EUR |
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Technische Details DMWS120H100SM4 Diodes Incorporated
Description: SIC MOSFET BVDSS: >1000V TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37.2A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 15V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 5mA, Supplier Device Package: TO-247-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 1000 V.
Weitere Produktangebote DMWS120H100SM4 nach Preis ab 19.33 EUR bis 32.82 EUR
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DMWS120H100SM4 | Hersteller : Diodes Incorporated |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37.2A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 15V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 5mA Supplier Device Package: TO-247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 1000 V |
auf Bestellung 1857 Stücke: Lieferzeit 10-14 Tag (e) |
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DMWS120H100SM4 | Hersteller : Diodes Inc |
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