DMWSH120H90SCT7Q Diodes Incorporated
auf Bestellung 47 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 18.41 EUR |
| 10+ | 14.98 EUR |
| 100+ | 12.46 EUR |
| 500+ | 11.12 EUR |
| 1000+ | 10.38 EUR |
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Technische Details DMWSH120H90SCT7Q Diodes Incorporated
Description: SICFET N-CH 1200V TO-247, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V, Power Dissipation (Max): 197W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 5mA, Supplier Device Package: TO-263-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V, Qualification: AEC-Q101.
Weitere Produktangebote DMWSH120H90SCT7Q nach Preis ab 12.58 EUR bis 12.58 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| DMWSH120H90SCT7Q | Hersteller : Diodes Incorporated |
 Description: SICFET N-CH 1200V TO-247Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38.2A (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V Power Dissipation (Max): 197W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 5mA Supplier Device Package: TO-263-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 54.6 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1078 pF @ 1000 V Qualification: AEC-Q101 |
auf Bestellung 1450 Stücke: Lieferzeit 10-14 Tag (e) |
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