DMWSH120H90SM4 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: SICFET N-CH 1200V TO-247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 20A, 15V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51.1 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1112 pF @ 1000 V
auf Bestellung 120320 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 16.81 EUR |
| 30+ | 11.72 EUR |
| 120+ | 10.81 EUR |
| 510+ | 10.3 EUR |
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Technische Details DMWSH120H90SM4 Diodes Incorporated
Description: SICFET N-CH 1200V TO-247, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 97.5mOhm @ 20A, 15V, Power Dissipation (Max): 235W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 5mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 51.1 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1112 pF @ 1000 V.
Weitere Produktangebote DMWSH120H90SM4 nach Preis ab 9.72 EUR bis 17.9 EUR
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DMWSH120H90SM4 | Hersteller : Diodes Incorporated |
SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS |
auf Bestellung 34 Stücke: Lieferzeit 10-14 Tag (e) |
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