DMWSH170H850HM4 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: SIC MOSFET BVDSS: >1000V TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.58A (Tj)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 20V
Power Dissipation (Max): 73.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 1000 V
auf Bestellung 1260 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 30+ | 4.45 EUR |
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Technische Details DMWSH170H850HM4 Diodes Incorporated
Description: SIC MOSFET BVDSS: >1000V TO247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.58A (Tj), Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 20V, Power Dissipation (Max): 73.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 500µA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 18V, 20V, Vgs (Max): +25V, -10V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 1000 V.
Weitere Produktangebote DMWSH170H850HM4 nach Preis ab 3.57 EUR bis 7.67 EUR
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| DMWSH170H850HM4 | Hersteller : Diodes Incorporated |
SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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