DN2450N8-G Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET N-CH 500V 230MA TO243AA
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
Rds On (Max) @ Id, Vgs: 10Ohm @ 300mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 1245 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 13+ | 1.46 EUR |
| 25+ | 1.23 EUR |
| 100+ | 1.12 EUR |
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Technische Details DN2450N8-G Microchip Technology
Description: MOSFET N-CH 500V 230MA TO243AA, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 230mA (Tj), Rds On (Max) @ Id, Vgs: 10Ohm @ 300mA, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 1.6W (Ta), Supplier Device Package: TO-243AA (SOT-89), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V.
Weitere Produktangebote DN2450N8-G nach Preis ab 0.99 EUR bis 1.47 EUR
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DN2450N8-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 0.7A; 1.6W; SOT89-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Pulsed drain current: 0.7A Power dissipation: 1.6W Case: SOT89-3 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depleted Anzahl je Verpackung: 1 Stücke |
auf Bestellung 614 Stücke: Lieferzeit 7-14 Tag (e) |
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DN2450N8-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 0.7A; 1.6W; SOT89-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Pulsed drain current: 0.7A Power dissipation: 1.6W Case: SOT89-3 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depleted |
auf Bestellung 614 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2450N8-G | Hersteller : Microchip Technology |
MOSFET MOSFET DEPLETION MODE 500V 10 Ohms |
auf Bestellung 11577 Stücke: Lieferzeit 10-14 Tag (e) |
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DN2450N8-G | Hersteller : Microchip Technology |
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DN2450N8-G | Hersteller : Microchip Technology |
Description: MOSFET N-CH 500V 230MA TO243AA Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Tj) Rds On (Max) @ Id, Vgs: 10Ohm @ 300mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 1.6W (Ta) Supplier Device Package: TO-243AA (SOT-89) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V |
Produkt ist nicht verfügbar |