DN2530N8-G MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 0.2A; 740mW; SOT89-3
Mounting: SMD
Kind of channel: depleted
Gate-source voltage: ±20V
Pulsed drain current: 0.2A
Case: SOT89-3
Drain-source voltage: 300V
On-state resistance: 12Ω
Type of transistor: N-MOSFET
Power dissipation: 0.74W
Polarisation: unipolar
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 0.2A; 740mW; SOT89-3
Mounting: SMD
Kind of channel: depleted
Gate-source voltage: ±20V
Pulsed drain current: 0.2A
Case: SOT89-3
Drain-source voltage: 300V
On-state resistance: 12Ω
Type of transistor: N-MOSFET
Power dissipation: 0.74W
Polarisation: unipolar
Kind of package: reel; tape
auf Bestellung 375 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
61+ | 1.17 EUR |
64+ | 1.13 EUR |
74+ | 0.97 EUR |
77+ | 0.93 EUR |
100+ | 0.89 EUR |
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Produktbewertung abgeben
Technische Details DN2530N8-G MICROCHIP TECHNOLOGY
Description: MOSFET N-CH 300V 200MA TO243AA, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Tj), Rds On (Max) @ Id, Vgs: 12Ohm @ 150mA, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 1.6W (Ta), Supplier Device Package: TO-243AA (SOT-89), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V.
Weitere Produktangebote DN2530N8-G nach Preis ab 0.88 EUR bis 2.13 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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DN2530N8-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 0.2A; 740mW; SOT89-3 Mounting: SMD Kind of channel: depleted Gate-source voltage: ±20V Pulsed drain current: 0.2A Case: SOT89-3 Drain-source voltage: 300V On-state resistance: 12Ω Type of transistor: N-MOSFET Power dissipation: 0.74W Polarisation: unipolar Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 375 Stücke: Lieferzeit 7-14 Tag (e) |
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DN2530N8-G | Hersteller : Microchip Technology | Trans MOSFET N-CH Si 300V 0.2A 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 375 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2530N8-G | Hersteller : Microchip Technology | Trans MOSFET N-CH Si 300V 0.2A 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2530N8-G | Hersteller : Microchip Technology | Trans MOSFET N-CH Si 300V 0.2A 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2530N8-G | Hersteller : Microchip Technology | Trans MOSFET N-CH Si 300V 0.2A 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2530N8-G | Hersteller : Microchip Technology |
Description: MOSFET N-CH 300V 200MA TO243AA Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Tj) Rds On (Max) @ Id, Vgs: 12Ohm @ 150mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 1.6W (Ta) Supplier Device Package: TO-243AA (SOT-89) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
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DN2530N8-G | Hersteller : Microchip Technology |
Description: MOSFET N-CH 300V 200MA TO243AA Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Tj) Rds On (Max) @ Id, Vgs: 12Ohm @ 150mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 1.6W (Ta) Supplier Device Package: TO-243AA (SOT-89) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
auf Bestellung 5180 Stücke: Lieferzeit 21-28 Tag (e) |
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DN2530N8-G | Hersteller : Microchip Technology | MOSFET 300V 12Ohm |
auf Bestellung 2730 Stücke: Lieferzeit 14-28 Tag (e) |
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DN2530N8-G | Hersteller : Microchip Technology | Trans MOSFET N-CH Si 300V 0.2A 4-Pin(3+Tab) SOT-89 T/R |
Produkt ist nicht verfügbar |
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DN2530N8-G | Hersteller : Microchip Technology | Trans MOSFET N-CH Si 300V 0.2A 4-Pin(3+Tab) SOT-89 T/R |
Produkt ist nicht verfügbar |