DN2530N8-G Microchip Technology
| Anzahl | Privatkunde |
|---|---|
| 500+ | 1.4 EUR |
| 2000+ | 1.3 EUR |
| 4000+ | 1.25 EUR |
Artikel auf Bestellung
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
500 Stücke
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Technische Details DN2530N8-G Microchip Technology
Description: MOSFET N-CH 300V 200MA TO243AA, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 200mA (Tj), Rds On (Max) @ Id, Vgs: 12Ohm @ 150mA, 0V, Power Dissipation (Max): 1.6W (Ta), Supplier Device Package: TO-243AA (SOT-89), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V.
Weitere Produktangebote DN2530N8-G nach Preis ab 1.17 EUR bis 1.63 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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DN2530N8-G | Microchip Technology |
 MOSFETs 300V 12Ohm |
auf Bestellung 1870 Stücke: Lieferzeit 10-14 Tag (e) |
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DN2530N8-G | Microchip Technology |
Description: MOSFET N-CH 300V 200MA TO243AA Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 200mA (Tj) Rds On (Max) @ Id, Vgs: 12Ohm @ 150mA, 0V Power Dissipation (Max): 1.6W (Ta) Supplier Device Package: TO-243AA (SOT-89) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
auf Bestellung 1703 Stücke: Lieferzeit 10-14 Tag (e) |
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DN2530N8-G | MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 200mA; Idm: 0.5A; 740mW Case: SOT89-3 Mounting: SMD Kind of package: reel; tape Manufacturer standard package: 2000pcs. On-state resistance: 12Ω Pulsed drain current: 0.5A Power dissipation: 0.74W Polarisation: unipolar Drain current: 0.2A Kind of channel: depletion Drain-source voltage: 300V Type of transistor: N-MOSFET Gate-source voltage: ±20V |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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DN2530N8-G | Microchip Technology |
Trans MOSFET N-CH Si 300V 0.2A 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 68 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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DN2530N8-G | Microchip Technology |
Trans MOSFET N-CH Si 300V 0.2A 4-Pin(3+Tab) SOT-89 T/R |
auf Bestellung 68 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 8 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DN2530N8-G |
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Hersteller: Microchip Technology
MOSFETs 300V 12Ohm
MOSFETs 300V 12Ohm
auf Bestellung 1870 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.58 EUR |
| 25+ | 1.36 EUR |
| 2000+ | 1.17 EUR |
| DN2530N8-G |
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Hersteller: Microchip Technology
Description: MOSFET N-CH 300V 200MA TO243AA
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 150mA, 0V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Description: MOSFET N-CH 300V 200MA TO243AA
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 150mA, 0V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
auf Bestellung 1703 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.63 EUR |
| 25+ | 1.39 EUR |
| DN2530N8-G |
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Hersteller: MICROCHIP TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 200mA; Idm: 0.5A; 740mW
Case: SOT89-3
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 2000pcs.
On-state resistance: 12Ω
Pulsed drain current: 0.5A
Power dissipation: 0.74W
Polarisation: unipolar
Drain current: 0.2A
Kind of channel: depletion
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 200mA; Idm: 0.5A; 740mW
Case: SOT89-3
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 2000pcs.
On-state resistance: 12Ω
Pulsed drain current: 0.5A
Power dissipation: 0.74W
Polarisation: unipolar
Drain current: 0.2A
Kind of channel: depletion
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
| DN2530N8-G |
|
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 300V 0.2A 4-Pin(3+Tab) SOT-89 T/R
Trans MOSFET N-CH Si 300V 0.2A 4-Pin(3+Tab) SOT-89 T/R
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
| DN2530N8-G |
|
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 300V 0.2A 4-Pin(3+Tab) SOT-89 T/R
Trans MOSFET N-CH Si 300V 0.2A 4-Pin(3+Tab) SOT-89 T/R
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)