
DN2530N8-G Microchip Technology
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
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2000+ | 1.06 EUR |
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Technische Details DN2530N8-G Microchip Technology
Description: MOSFET N-CH 300V 200MA TO243AA, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 200mA (Tj), Rds On (Max) @ Id, Vgs: 12Ohm @ 150mA, 0V, Power Dissipation (Max): 1.6W (Ta), Supplier Device Package: TO-243AA (SOT-89), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V.
Weitere Produktangebote DN2530N8-G nach Preis ab 0.86 EUR bis 1.48 EUR
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DN2530N8-G | Hersteller : Microchip Technology |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 200mA (Tj) Rds On (Max) @ Id, Vgs: 12Ohm @ 150mA, 0V Power Dissipation (Max): 1.6W (Ta) Supplier Device Package: TO-243AA (SOT-89) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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DN2530N8-G | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 200mA; Idm: 0.5A; 740mW Case: SOT89-3 Drain-source voltage: 300V Drain current: 0.2A On-state resistance: 12Ω Type of transistor: N-MOSFET Power dissipation: 0.74W Polarisation: unipolar Kind of package: reel; tape Kind of channel: depletion Gate-source voltage: ±20V Pulsed drain current: 0.5A Mounting: SMD Anzahl je Verpackung: 1 Stücke |
auf Bestellung 123 Stücke: Lieferzeit 7-14 Tag (e) |
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DN2530N8-G | Hersteller : MICROCHIP TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 200mA; Idm: 0.5A; 740mW Case: SOT89-3 Drain-source voltage: 300V Drain current: 0.2A On-state resistance: 12Ω Type of transistor: N-MOSFET Power dissipation: 0.74W Polarisation: unipolar Kind of package: reel; tape Kind of channel: depletion Gate-source voltage: ±20V Pulsed drain current: 0.5A Mounting: SMD |
auf Bestellung 123 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2530N8-G | Hersteller : Microchip Technology |
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auf Bestellung 375 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2530N8-G | Hersteller : Microchip Technology |
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auf Bestellung 375 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2530N8-G | Hersteller : Microchip Technology |
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auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2530N8-G | Hersteller : Microchip Technology |
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auf Bestellung 173 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2530N8-G | Hersteller : Microchip Technology |
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auf Bestellung 4265 Stücke: Lieferzeit 10-14 Tag (e) |
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DN2530N8-G | Hersteller : Microchip Technology |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 200mA (Tj) Rds On (Max) @ Id, Vgs: 12Ohm @ 150mA, 0V Power Dissipation (Max): 1.6W (Ta) Supplier Device Package: TO-243AA (SOT-89) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
auf Bestellung 2649 Stücke: Lieferzeit 10-14 Tag (e) |
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DN2530N8-G | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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DN2530N8-G | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |