DN2535N3-G-P013 Microchip Technology

Description: MOSFET N-CH 350V 120MA TO92, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V, Drain to Source Voltage (Vdss): 350 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 0V, Part Status: Active, Supplier Device Package: TO-92 (TO-226), Power Dissipation (Max): 1W (Tc), Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V, Current - Continuous Drain (Id) @ 25°C: 120mA (Tj), FET Type: N-Channel, Depletion Mode, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Packaging: Tape & Box (TB).