Weitere Produktangebote DN2535N3-G nach Preis ab 1.24 EUR bis 1.68 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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DN2535N3-G | Microchip Technology |
 MOSFETs 350V 25Ohm |
auf Bestellung 1146 Stücke: Lieferzeit 10-14 Tag (e) |
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DN2535N3-G | Microchip Technology |
Description: MOSFET N-CH 350V 120MA TO92 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 120mA (Tj) Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V Power Dissipation (Max): 1W (Tc) Supplier Device Package: TO-92 (TO-226) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 350 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
auf Bestellung 154 Stücke: Lieferzeit 10-14 Tag (e) |
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DN2535N3-G | Microchip Technology |
Trans MOSFET N-CH Si 350V 0.12A 3-Pin TO-92 Bag |
auf Bestellung 600 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2535N3-G | Microchip Technology |
Trans MOSFET N-CH Si 350V 0.12A 3-Pin TO-92 Bag |
auf Bestellung 600 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2535N3-G | MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 350V; 120mA; Idm: 0.5A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 350V Drain current: 0.12A Pulsed drain current: 0.5A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 25Ω Mounting: THT Kind of package: bulk Kind of channel: depletion Manufacturer standard package: 1000pcs. |
auf Bestellung 66 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| DN2535N3-G |
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Hersteller: Microchip Technology
MOSFETs 350V 25Ohm
MOSFETs 350V 25Ohm
auf Bestellung 1146 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.64 EUR |
| 25+ | 1.39 EUR |
| 100+ | 1.29 EUR |
| DN2535N3-G |
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Hersteller: Microchip Technology
Description: MOSFET N-CH 350V 120MA TO92
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V
Power Dissipation (Max): 1W (Tc)
Supplier Device Package: TO-92 (TO-226)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Description: MOSFET N-CH 350V 120MA TO92
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V
Power Dissipation (Max): 1W (Tc)
Supplier Device Package: TO-92 (TO-226)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
auf Bestellung 154 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.68 EUR |
| 25+ | 1.4 EUR |
| 100+ | 1.3 EUR |
| DN2535N3-G |
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Hersteller: Microchip Technology
Trans MOSFET N-CH Si 350V 0.12A 3-Pin TO-92 Bag
Trans MOSFET N-CH Si 350V 0.12A 3-Pin TO-92 Bag
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 106+ | 1.68 EUR |
| 124+ | 1.39 EUR |
| 134+ | 1.24 EUR |
| DN2535N3-G |
|
Hersteller: Microchip Technology
Trans MOSFET N-CH Si 350V 0.12A 3-Pin TO-92 Bag
Trans MOSFET N-CH Si 350V 0.12A 3-Pin TO-92 Bag
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 106+ | 1.68 EUR |
| 124+ | 1.42 EUR |
| 134+ | 1.29 EUR |
| DN2535N3-G |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 120mA; Idm: 0.5A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.12A
Pulsed drain current: 0.5A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: THT
Kind of package: bulk
Kind of channel: depletion
Manufacturer standard package: 1000pcs.
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 120mA; Idm: 0.5A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 350V
Drain current: 0.12A
Pulsed drain current: 0.5A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: THT
Kind of package: bulk
Kind of channel: depletion
Manufacturer standard package: 1000pcs.
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)