DN2535N5-G MICROCHIP TECHNOLOGY
Hersteller: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.15A; 15W; TO220
Mounting: THT
Kind of channel: depleted
Gate-source voltage: ±20V
Pulsed drain current: 0.15A
Case: TO220
Drain-source voltage: 350V
On-state resistance: 25Ω
Type of transistor: N-MOSFET
Power dissipation: 15W
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 350V; 0.15A; 15W; TO220
Mounting: THT
Kind of channel: depleted
Gate-source voltage: ±20V
Pulsed drain current: 0.15A
Case: TO220
Drain-source voltage: 350V
On-state resistance: 25Ω
Type of transistor: N-MOSFET
Power dissipation: 15W
Polarisation: unipolar
Kind of package: tube
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
28+ | 2.57 EUR |
29+ | 2.5 EUR |
30+ | 2.45 EUR |
31+ | 2.32 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DN2535N5-G MICROCHIP TECHNOLOGY
Description: MOSFET N-CH 350V 500MA TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Tj), Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 15W (Tc), Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 350 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V.
Weitere Produktangebote DN2535N5-G nach Preis ab 2.23 EUR bis 4.11 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis ohne MwSt | ||||||||||||
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DN2535N5-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 350V; 0.15A; 15W; TO220 Mounting: THT Kind of channel: depleted Gate-source voltage: ±20V Pulsed drain current: 0.15A Case: TO220 Drain-source voltage: 350V On-state resistance: 25Ω Type of transistor: N-MOSFET Power dissipation: 15W Polarisation: unipolar Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 48 Stücke: Lieferzeit 7-14 Tag (e) |
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DN2535N5-G | Hersteller : Microchip Technology | Trans MOSFET N-CH Si 350V 0.5A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 550 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2535N5-G | Hersteller : Microchip Technology | MOSFET 350V 25Ohm |
auf Bestellung 538 Stücke: Lieferzeit 14-28 Tag (e) |
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DN2535N5-G | Hersteller : Microchip Technology |
Description: MOSFET N-CH 350V 500MA TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Tj) Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 15W (Tc) Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 350 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V |
auf Bestellung 145 Stücke: Lieferzeit 21-28 Tag (e) |
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DN2535N5-G | Hersteller : Microchip Technology | Trans MOSFET N-CH Si 350V 0.5A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |
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DN2535N5-G | Hersteller : Microchip Technology | Trans MOSFET N-CH Si 350V 0.5A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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DN2535N5-G | Hersteller : Microchip Technology | Trans MOSFET N-CH Si 350V 0.5A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
||||||||||||||
DN2535N5-G | Hersteller : Microchip Technology | Trans MOSFET N-CH Si 350V 0.5A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |