
DN3765K4-G Microchip Technology

Description: MOSFET N-CH 650V 300MA TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 300mA (Tj)
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 0V
Power Dissipation (Max): 2.5W (Ta)
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 25 V
auf Bestellung 1727 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
4+ | 5.07 EUR |
25+ | 4.27 EUR |
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Technische Details DN3765K4-G Microchip Technology
Description: MOSFET N-CH 650V 300MA TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 300mA (Tj), Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 0V, Power Dissipation (Max): 2.5W (Ta), Supplier Device Package: TO-252 (DPAK), Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 25 V.
Weitere Produktangebote DN3765K4-G nach Preis ab 3.96 EUR bis 5.21 EUR
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DN3765K4-G | Hersteller : Microchip Technology |
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auf Bestellung 2320 Stücke: Lieferzeit 10-14 Tag (e) |
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DN3765K4-G | Hersteller : MICROCHIP TECHNOLOGY |
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DN3765K4-G | Hersteller : Microchip Technology |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 300mA (Tj) Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 0V Power Dissipation (Max): 2.5W (Ta) Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 25 V |
Produkt ist nicht verfügbar |