DN3765K4-G Microchip Technology
Hersteller: Microchip Technology
Description: MOSFET N-CH 650V 300MA TO252-3
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tj)
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 2.5W (Ta)
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 25 V
Description: MOSFET N-CH 650V 300MA TO252-3
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tj)
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 2.5W (Ta)
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2000+ | 4.03 EUR |
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Technische Details DN3765K4-G Microchip Technology
Description: MOSFET N-CH 650V 300MA TO252-3, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300mA (Tj), Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 2.5W (Ta), Supplier Device Package: TO-252 (DPAK), Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 25 V.
Weitere Produktangebote DN3765K4-G nach Preis ab 5.03 EUR bis 8.16 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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DN3765K4-G | Hersteller : Microchip Technology |
Description: MOSFET N-CH 650V 300MA TO252-3 Packaging: Cut Tape (CT) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Tj) Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 2.5W (Ta) Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 25 V |
auf Bestellung 3653 Stücke: Lieferzeit 10-14 Tag (e) |
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DN3765K4-G | Hersteller : Microchip Technology | MOSFET NCh DEPLETION-MODE VERTICAL DMOS FET |
auf Bestellung 2952 Stücke: Lieferzeit 14-28 Tag (e) |
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DN3765K4-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 0.2A; 2.5W; TO252 Kind of package: reel; tape Pulsed drain current: 0.2A Power dissipation: 2.5W Polarisation: unipolar Kind of channel: depleted Drain-source voltage: 650V Type of transistor: N-MOSFET Case: TO252 On-state resistance: 8Ω Gate-source voltage: ±20V Mounting: SMD Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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DN3765K4-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 0.2A; 2.5W; TO252 Kind of package: reel; tape Pulsed drain current: 0.2A Power dissipation: 2.5W Polarisation: unipolar Kind of channel: depleted Drain-source voltage: 650V Type of transistor: N-MOSFET Case: TO252 On-state resistance: 8Ω Gate-source voltage: ±20V Mounting: SMD |
Produkt ist nicht verfügbar |