DN3765K4-G

DN3765K4-G Microchip Technology


DN3765%20A070113.pdf Hersteller: Microchip Technology
Description: MOSFET N-CH 650V 300MA TO252-3
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tj)
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 2.5W (Ta)
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 25 V
auf Bestellung 2000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+4.03 EUR
Mindestbestellmenge: 2000
Produktrezensionen
Produktbewertung abgeben

Technische Details DN3765K4-G Microchip Technology

Description: MOSFET N-CH 650V 300MA TO252-3, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300mA (Tj), Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 2.5W (Ta), Supplier Device Package: TO-252 (DPAK), Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 25 V.

Weitere Produktangebote DN3765K4-G nach Preis ab 5.03 EUR bis 8.16 EUR

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DN3765K4-G DN3765K4-G Hersteller : Microchip Technology DN3765%20A070113.pdf Description: MOSFET N-CH 650V 300MA TO252-3
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tj)
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 2.5W (Ta)
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 25 V
auf Bestellung 3653 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.3 EUR
100+ 5.03 EUR
Mindestbestellmenge: 4
DN3765K4-G DN3765K4-G Hersteller : Microchip Technology DN3765 A070113-965148.pdf MOSFET NCh DEPLETION-MODE VERTICAL DMOS FET
auf Bestellung 2952 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
7+8.16 EUR
25+ 6.84 EUR
100+ 6.34 EUR
4000+ 6.32 EUR
Mindestbestellmenge: 7
DN3765K4-G DN3765K4-G Hersteller : MICROCHIP TECHNOLOGY dn3765.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 0.2A; 2.5W; TO252
Kind of package: reel; tape
Pulsed drain current: 0.2A
Power dissipation: 2.5W
Polarisation: unipolar
Kind of channel: depleted
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Case: TO252
On-state resistance:
Gate-source voltage: ±20V
Mounting: SMD
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
DN3765K4-G DN3765K4-G Hersteller : MICROCHIP TECHNOLOGY dn3765.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 0.2A; 2.5W; TO252
Kind of package: reel; tape
Pulsed drain current: 0.2A
Power dissipation: 2.5W
Polarisation: unipolar
Kind of channel: depleted
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Case: TO252
On-state resistance:
Gate-source voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar