DRDNB16W-7 Diodes Incorporated
| Anzahl | Preis |
|---|---|
| 5+ | 0.61 EUR |
| 10+ | 0.43 EUR |
| 100+ | 0.26 EUR |
| 1000+ | 0.18 EUR |
| 3000+ | 0.15 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DRDNB16W-7 Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT363, Resistors Included: R1 and R2, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Transistor Type: NPN - Pre-Biased + Diode, Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR), Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 1 kOhms, Frequency - Transition: 200 MHz, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 600 mA, Supplier Device Package: SOT-363, DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V.
Weitere Produktangebote DRDNB16W-7 nach Preis ab 0.2 EUR bis 0.77 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DRDNB16W-7 | Diodes Incorporated |
 Description: TRANS PREBIAS NPN 50V SOT363Resistors Included: R1 and R2 Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 600 mA Supplier Device Package: SOT-363 DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Transistor Type: NPN - Pre-Biased + Diode Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 1 kOhms Frequency - Transition: 200 MHz Power - Max: 200 mW |
auf Bestellung 2753 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DRDNB16W-7 |
|
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT363
Resistors Included: R1 and R2
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Description: TRANS PREBIAS NPN 50V SOT363
Resistors Included: R1 and R2
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased + Diode
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
auf Bestellung 2753 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 23+ | 0.77 EUR |
| 37+ | 0.48 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.2 EUR |