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DS1-12D IXYS

DS1%2CDSA1.pdf Hersteller: IXYS
Description: DIODE GEN PURP 1.2KV 2.3A RADIAL
Packaging: Box
Package / Case: Radial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2.3A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 7 A
Current - Reverse Leakage @ Vr: 700 µA @ 1200 V
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Technische Details DS1-12D IXYS

Description: DIODE GEN PURP 1.2KV 2.3A RADIAL, Packaging: Box, Package / Case: Radial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 2.3A, Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 7 A, Current - Reverse Leakage @ Vr: 700 µA @ 1200 V.