Technische Details DS1220Y100 DALLAS
Description: IC NVSRAM 16KBIT PARALLEL 24EDIP, Packaging: Tube, Package / Case: 24-DIP Module (0.600", 15.24mm), Mounting Type: Through Hole, Memory Size: 16Kbit, Memory Type: Non-Volatile, Operating Temperature: 0°C ~ 70°C (TA), Voltage - Supply: 4.5V ~ 5.5V, Technology: NVSRAM (Non-Volatile SRAM), Memory Format: NVSRAM, Supplier Device Package: 24-EDIP, Write Cycle Time - Word, Page: 100ns, Memory Interface: Parallel, Access Time: 100 ns, Memory Organization: 2K x 8, DigiKey Programmable: Not Verified.
Weitere Produktangebote DS1220Y100
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| DS1220Y-100+ | Hersteller : DALLAS |
 09+ |
auf Bestellung 1448 Stücke: Lieferzeit 21-28 Tag (e) |
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| DS1220Y-100 | Hersteller : DALLAS | DIP-24 08+09+ |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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DS1220Y-100+ | Hersteller : Analog Devices Inc./Maxim Integrated |
Description: IC NVSRAM 16KBIT PARALLEL 24EDIP Packaging: Tube Package / Case: 24-DIP Module (0.600", 15.24mm) Mounting Type: Through Hole Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 24-EDIP Write Cycle Time - Word, Page: 100ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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DS1220Y-100+ | Hersteller : Maxim Integrated |
SRAM DS1220Y-100+ |
Produkt ist nicht verfügbar |