Technische Details DS2016100 DALLAS
Description: IC SRAM 16KBIT PARALLEL 24DIP, Packaging: Tube, Package / Case: 24-DIP (0.600", 15.24mm), Mounting Type: Through Hole, Memory Size: 16Kbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 5.5V, Technology: SRAM, Memory Format: SRAM, Supplier Device Package: 24-PDIP, Write Cycle Time - Word, Page: 100ns, Memory Interface: Parallel, Access Time: 100 ns, Memory Organization: 2K x 8, DigiKey Programmable: Not Verified.
Weitere Produktangebote DS2016100
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| DS2016-100 | Hersteller : DALLAS |
 2002 |
auf Bestellung 198 Stücke: Lieferzeit 21-28 Tag (e) |
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DS2016-100 | Hersteller : Analog Devices Inc./Maxim Integrated |
Description: IC SRAM 16KBIT PARALLEL 24DIP Packaging: Tube Package / Case: 24-DIP (0.600", 15.24mm) Mounting Type: Through Hole Memory Size: 16Kbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 5.5V Technology: SRAM Memory Format: SRAM Supplier Device Package: 24-PDIP Write Cycle Time - Word, Page: 100ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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DS2016-100+ | Hersteller : Analog Devices Inc./Maxim Integrated |
Description: IC SRAM 16KBIT PARALLEL 24DIP Packaging: Tube Package / Case: 24-DIP (0.600", 15.24mm) Mounting Type: Through Hole Memory Size: 16Kbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 5.5V Technology: SRAM Memory Format: SRAM Supplier Device Package: 24-PDIP Write Cycle Time - Word, Page: 100ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |