DSB5817/TR Microchip Technology
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY REV 20V 1A DO41
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Technology: Schottky, Reverse Polarity
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO041, Axial
Packaging: Tape & Reel (TR)
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Technische Details DSB5817/TR Microchip Technology
Description: DIODE SCHOTTKY REV 20V 1A DO41, Current - Reverse Leakage @ Vr: 100 µA @ 20 V, Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 20 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 125°C, Supplier Device Package: DO-41, Current - Average Rectified (Io): 1A, Technology: Schottky, Reverse Polarity, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-204AL, DO041, Axial, Packaging: Tape & Reel (TR).

