DSC06A065LP-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 295pF @ 100mV, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
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Technische Details DSC06A065LP-13 Diodes Incorporated
Description: SIC SBD 650V~1000V T-DFN8080-5 T, Packaging: Tape & Reel (TR), Package / Case: 4-PowerTSFN, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 295pF @ 100mV, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: DFN8080, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A, Current - Reverse Leakage @ Vr: 20 µA @ 650 V.
Weitere Produktangebote DSC06A065LP-13 nach Preis ab 3.2 EUR bis 7.91 EUR
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DSC06A065LP-13 | Diodes Incorporated |
Description: SIC SBD 650V~1000V T-DFN8080-5 T Packaging: Cut Tape (CT) Package / Case: 4-PowerTSFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 295pF @ 100mV, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: DFN8080 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 20 µA @ 650 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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DSC06A065LP-13 | Diodes Incorporated |
 SiC Schottky Diodes SiC SBD 650V-1000V T-DFN8080-4 T&R 2.5K |
auf Bestellung 2497 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DSC06A065LP-13 |
Hersteller: Diodes Incorporated
Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 295pF @ 100mV, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Description: SIC SBD 650V~1000V T-DFN8080-5 T
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 295pF @ 100mV, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DFN8080
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.85 EUR |
| 10+ | 5.18 EUR |
| 100+ | 3.67 EUR |
| 500+ | 3.37 EUR |
| DSC06A065LP-13 |
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Hersteller: Diodes Incorporated
SiC Schottky Diodes SiC SBD 650V-1000V T-DFN8080-4 T&R 2.5K
SiC Schottky Diodes SiC SBD 650V-1000V T-DFN8080-4 T&R 2.5K
auf Bestellung 2497 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.91 EUR |
| 10+ | 5.3 EUR |
| 100+ | 4.06 EUR |
| 500+ | 3.62 EUR |
| 1000+ | 3.2 EUR |