Produkte > DIODES INCORPORATED > DSC06C065D1-13
DSC06C065D1-13

DSC06C065D1-13 Diodes Incorporated


DSC06C065-3240575.pdf Hersteller: Diodes Incorporated
SiC Schottky Diodes SiC SBD 650V-1000V TO252 T&R 2.5K
auf Bestellung 2499 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.52 EUR
10+1.72 EUR
100+1.20 EUR
500+0.98 EUR
1000+0.90 EUR
5000+0.88 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DSC06C065D1-13 Diodes Incorporated

Description: DIODE SIL CARBIDE 650V 6A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 184pF @ 100mV, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: TO-252 (Type WX), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A, Current - Reverse Leakage @ Vr: 170 µA @ 650 V.

Weitere Produktangebote DSC06C065D1-13 nach Preis ab 0.95 EUR bis 3.04 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DSC06C065D1-13 DSC06C065D1-13 Hersteller : Diodes Incorporated DSC06C065D1.pdf Description: DIODE SIL CARBIDE 650V 6A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 184pF @ 100mV, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.04 EUR
10+1.95 EUR
100+1.31 EUR
500+1.04 EUR
1000+0.95 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
DSC06C065D1-13 DSC06C065D1-13 Hersteller : Diodes Incorporated DSC06C065D1.pdf Description: DIODE SIL CARBIDE 650V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 184pF @ 100mV, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 170 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH