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DSC08C065D1-13

DSC08C065D1-13 Diodes Incorporated


DSC08C065-3240665.pdf Hersteller: Diodes Incorporated
Schottky Diodes & Rectifiers Silicon Carbide Rectifier TO252 T&R 2.5K
auf Bestellung 2500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.33 EUR
10+2.76 EUR
100+2.20 EUR
500+1.87 EUR
1000+1.58 EUR
2500+1.50 EUR
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Technische Details DSC08C065D1-13 Diodes Incorporated

Description: DIODE SIL CARBIDE 650V 8A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 278pF @ 100mV, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-252 (Type WX), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Current - Reverse Leakage @ Vr: 200 µA @ 650 V.

Weitere Produktangebote DSC08C065D1-13 nach Preis ab 1.24 EUR bis 3.82 EUR

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DSC08C065D1-13 DSC08C065D1-13 Hersteller : Diodes Incorporated DSC08C065D1.pdf Description: DIODE SIL CARBIDE 650V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 278pF @ 100mV, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
auf Bestellung 2495 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.82 EUR
10+2.46 EUR
100+1.68 EUR
500+1.34 EUR
1000+1.24 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
DSC08C065D1-13 DSC08C065D1-13 Hersteller : Diodes Incorporated DSC08C065D1.pdf Description: DIODE SIL CARBIDE 650V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 278pF @ 100mV, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
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Im Einkaufswagen  Stück im Wert von  UAH