DSC08C065D1-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: DIODE SIL CARBIDE 650V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 278pF @ 100mV, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
| Anzahl | Preis |
|---|---|
| 2500+ | 1.15 EUR |
| 5000+ | 1.08 EUR |
| 7500+ | 1.04 EUR |
| 12500+ | 1.02 EUR |
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Technische Details DSC08C065D1-13 Diodes Incorporated
Description: DIODE SIL CARBIDE 650V 8A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 278pF @ 100mV, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-252 (Type WX), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Current - Reverse Leakage @ Vr: 200 µA @ 650 V.
Weitere Produktangebote DSC08C065D1-13 nach Preis ab 1.27 EUR bis 3.92 EUR
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DSC08C065D1-13 | Diodes Incorporated |
Schottky Diodes & Rectifiers Silicon Carbide Rectifier TO252 T&R 2.5K |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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DSC08C065D1-13 | Diodes Incorporated |
Description: DIODE SIL CARBIDE 650V 8A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 278pF @ 100mV, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-252 (Type WX) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
auf Bestellung 14995 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DSC08C065D1-13 |
|
Hersteller: Diodes Incorporated
Schottky Diodes & Rectifiers Silicon Carbide Rectifier TO252 T&R 2.5K
Schottky Diodes & Rectifiers Silicon Carbide Rectifier TO252 T&R 2.5K
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.33 EUR |
| 10+ | 2.76 EUR |
| 100+ | 2.2 EUR |
| 500+ | 1.87 EUR |
| 1000+ | 1.58 EUR |
| 2500+ | 1.5 EUR |
| DSC08C065D1-13 |
|
Hersteller: Diodes Incorporated
Description: DIODE SIL CARBIDE 650V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 278pF @ 100mV, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 278pF @ 100mV, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
auf Bestellung 14995 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.92 EUR |
| 10+ | 2.52 EUR |
| 100+ | 1.72 EUR |
| 500+ | 1.38 EUR |
| 1000+ | 1.27 EUR |