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DSC10A065D1-13

DSC10A065D1-13 Diodes Incorporated


DSC10A065D1-3103762.pdf Hersteller: Diodes Incorporated
SiC Schottky Diodes SiC SBD 650V-1000V TO252 T&R 2.5K
auf Bestellung 2346 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.68 EUR
10+3.15 EUR
100+2.22 EUR
500+1.83 EUR
1000+1.74 EUR
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Technische Details DSC10A065D1-13 Diodes Incorporated

Description: DIODE SIL CARBIDE 650V 10A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 434pF @ 100mV, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-252 (Type WX), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A, Current - Reverse Leakage @ Vr: 250 µA @ 650 V.

Weitere Produktangebote DSC10A065D1-13 nach Preis ab 1.71 EUR bis 5.03 EUR

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DSC10A065D1-13 DSC10A065D1-13 Hersteller : Diodes Incorporated DSC10A065D1.pdf Description: DIODE SIL CARBIDE 650V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 434pF @ 100mV, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
auf Bestellung 1956 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.03 EUR
10+3.27 EUR
100+2.27 EUR
500+1.84 EUR
1000+1.71 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
DSC10A065D1-13 DSC10A065D1-13 Hersteller : Diodes Incorporated DSC10A065D1.pdf Description: DIODE SIL CARBIDE 650V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 434pF @ 100mV, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (Type WX)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
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Im Einkaufswagen  Stück im Wert von  UAH