DSM80100M-7

DSM80100M-7 Diodes Incorporated


DSM80100M-764983.pdf Hersteller: Diodes Incorporated
Bipolar Transistors - BJT PNP Trans Dual 400mW Switching -80V
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Technische Details DSM80100M-7 Diodes Incorporated

Description: TRANS PNP 80V 0.5A SOT-26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Transistor Type: PNP + Diode (Isolated), Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V, Supplier Device Package: SOT-26, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 600 mW.

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DSM80100M-7 DSM80100M-7 Hersteller : Diodes Incorporated Description: TRANS PNP 80V 0.5A SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Transistor Type: PNP + Diode (Isolated)
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
Supplier Device Package: SOT-26
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 600 mW
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