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DSS4160FDB-7

DSS4160FDB-7 Diodes Incorporated

DSS4160FDB.pdf Hersteller: Diodes Incorporated
Bipolar Transistors - BJT SS Low Sat Transistor
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3+1 EUR
10+ 0.85 EUR
100+ 0.59 EUR
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1000+ 0.38 EUR
3000+ 0.32 EUR
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Technische Details DSS4160FDB-7 Diodes Incorporated

Description: TRANS NPH U-DFN2020-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 405mW, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V, Frequency - Transition: 175MHz, Supplier Device Package: U-DFN2020-6 (Type B), Part Status: Active.

Weitere Produktangebote DSS4160FDB-7 nach Preis ab 0.91 EUR bis 1.06 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DSS4160FDB-7 DSS4160FDB-7 Hersteller : Diodes Incorporated DSS4160FDB.pdf Description: TRANS NPH U-DFN2020-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
Frequency - Transition: 175MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
auf Bestellung 55 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.06 EUR
20+ 0.91 EUR
Mindestbestellmenge: 17
DSS4160FDB-7 DSS4160FDB-7 Hersteller : Diodes Incorporated DSS4160FDB.pdf Description: TRANS NPH U-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
Frequency - Transition: 175MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
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