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Technische Details DSS4160FDB-7 Diodes Zetex
Description: TRANS NPH U-DFN2020-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 405mW, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V, Frequency - Transition: 175MHz, Supplier Device Package: U-DFN2020-6 (Type B), Part Status: Active.
Weitere Produktangebote DSS4160FDB-7 nach Preis ab 0.7 EUR bis 1.65 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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DSS4160FDB-7 | Diodes Incorporated |
 Description: TRANS NPH U-DFN2020-6Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 405mW Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V Frequency - Transition: 175MHz Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active |
auf Bestellung 55 Stücke: Lieferzeit 10-14 Tag (e) |
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DSS4160FDB-7 | Diodes Incorporated |
Bipolar Transistors - BJT SS Low Sat Transistor |
auf Bestellung 253 Stücke: Lieferzeit 10-14 Tag (e) |
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| DSS4160FDB-7 |
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Hersteller: Diodes Incorporated
Description: TRANS NPH U-DFN2020-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
Frequency - Transition: 175MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Description: TRANS NPH U-DFN2020-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V
Frequency - Transition: 175MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
auf Bestellung 55 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.26 EUR |
| 20+ | 1.08 EUR |
| DSS4160FDB-7 |
|
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT SS Low Sat Transistor
Bipolar Transistors - BJT SS Low Sat Transistor
auf Bestellung 253 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.65 EUR |
| 10+ | 1.02 EUR |
| 100+ | 0.7 EUR |