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DSS4160FDBQ-7

DSS4160FDBQ-7 Diodes Incorporated

DSS4160FDBQ.pdf Hersteller: Diodes Incorporated
Description: TRANS 2NPN 60V 1A U-DFN2020-6
Packaging: Bulk
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 100mA, 2V
Frequency - Transition: 175MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2883 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.51 EUR
19+0.95 EUR
100+0.62 EUR
500+0.48 EUR
1000+0.43 EUR
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Technische Details DSS4160FDBQ-7 Diodes Incorporated

Description: TRANS 2NPN 60V 1A U-DFN2020-6, Packaging: Bulk, Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 405mW, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 100mA, 2V, Frequency - Transition: 175MHz, Supplier Device Package: U-DFN2020-6 (Type B), Grade: Automotive, Qualification: AEC-Q101.

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DSS4160FDBQ-7 Hersteller : Diodes Incorporated DSS4160FDBQ.pdf Bipolar Transistors - BJT SS Low Sat Transistor U-DFN2020-6 T&R 3K
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