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DSS4310FJAWQ-7 Diodes Incorporated


DSS4310FJAWQ.pdf Hersteller: Diodes Incorporated
Bipolar Transistors - BJT SS Low Sat Transistor W-DFN2020-3/SWP T&R 3K
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Technische Details DSS4310FJAWQ-7 Diodes Incorporated

Description: SS LOW SAT TRANSISTOR W-DFN2020-, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 110mV @ 30mA, 3A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 325 @ 500mA, 2V, Frequency - Transition: 100MHz, Supplier Device Package: 8-SO, Grade: Automotive, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 10 V, Power - Max: 695 mW, Qualification: AEC-Q101.

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DSS4310FJAWQ-7 DSS4310FJAWQ-7 Hersteller : Diodes Incorporated DSS4310FJAWQ.pdf Description: SS LOW SAT TRANSISTOR W-DFN2020-
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 110mV @ 30mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 325 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 8-SO
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 10 V
Power - Max: 695 mW
Qualification: AEC-Q101
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