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DSS45160FDB-7

DSS45160FDB-7 Diodes Incorporated

DSS45160FDB.pdf Hersteller: Diodes Incorporated
Description: TRANS NPN/PNP 60V U-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V
Frequency - Transition: 175MHz, 65MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.35 EUR
6000+0.32 EUR
9000+0.31 EUR
15000+0.29 EUR
21000+0.28 EUR
Mindestbestellmenge: 3000
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Technische Details DSS45160FDB-7 Diodes Incorporated

Description: TRANS NPN/PNP 60V U-DFN2020-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 405mW, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V, Frequency - Transition: 175MHz, 65MHz, Supplier Device Package: U-DFN2020-6 (Type B), Part Status: Active.

Weitere Produktangebote DSS45160FDB-7 nach Preis ab 0.30 EUR bis 1.46 EUR

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DSS45160FDB-7 DSS45160FDB-7 Hersteller : Diodes Incorporated DSS45160FDB.pdf Bipolar Transistors - BJT SS Low Sat Transistor
auf Bestellung 4403 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.02 EUR
10+0.77 EUR
100+0.52 EUR
500+0.42 EUR
1000+0.38 EUR
3000+0.31 EUR
9000+0.30 EUR
Mindestbestellmenge: 3
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DSS45160FDB-7 DSS45160FDB-7 Hersteller : Diodes Incorporated DSS45160FDB.pdf Description: TRANS NPN/PNP 60V U-DFN2020-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V
Frequency - Transition: 175MHz, 65MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
auf Bestellung 62979 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.46 EUR
20+0.90 EUR
100+0.59 EUR
500+0.45 EUR
1000+0.41 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
DSS45160FDB-7 Hersteller : DIODES INCORPORATED DSS45160FDB.pdf DSS45160FDB-7 Complementary transistors
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