DSS45160FDB-7 Diodes Incorporated
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.24 EUR |
| 10+ | 1.37 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.61 EUR |
| 3000+ | 0.51 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DSS45160FDB-7 Diodes Incorporated
Description: TRANS NPN/PNP 60V U-DFN2020-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 405mW, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V, Frequency - Transition: 175MHz, 65MHz, Supplier Device Package: U-DFN2020-6 (Type B), Part Status: Active.
Weitere Produktangebote DSS45160FDB-7
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
DSS45160FDB-7 | Diodes Incorporated |
 Description: TRANS NPN/PNP 60V U-DFN2020-6Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 405mW Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V Frequency - Transition: 175MHz, 65MHz Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
DSS45160FDB-7 | Diodes Incorporated |
Description: TRANS NPN/PNP 60V U-DFN2020-6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 405mW Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V Frequency - Transition: 175MHz, 65MHz Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DSS45160FDB-7 | DIODES INCORPORATED |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 60V; 1A; 2.47W Case: U-DFN2020-6 Polarisation: bipolar Kind of transistor: complementary pair Pulsed collector current: 1.5A Type of transistor: NPN / PNP Current gain: 70...430 Kind of package: reel; tape Frequency: 90...175MHz Collector current: 1A Mounting: SMD Manufacturer standard package: 3000pcs. Collector-emitter voltage: 60V Power dissipation: 2.47W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DSS45160FDB-7 |
|
Hersteller: Diodes Incorporated
Description: TRANS NPN/PNP 60V U-DFN2020-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V
Frequency - Transition: 175MHz, 65MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Description: TRANS NPN/PNP 60V U-DFN2020-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V
Frequency - Transition: 175MHz, 65MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSS45160FDB-7 |
|
Hersteller: Diodes Incorporated
Description: TRANS NPN/PNP 60V U-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V
Frequency - Transition: 175MHz, 65MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Description: TRANS NPN/PNP 60V U-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V
Frequency - Transition: 175MHz, 65MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DSS45160FDB-7 |
|
Hersteller: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 60V; 1A; 2.47W
Case: U-DFN2020-6
Polarisation: bipolar
Kind of transistor: complementary pair
Pulsed collector current: 1.5A
Type of transistor: NPN / PNP
Current gain: 70...430
Kind of package: reel; tape
Frequency: 90...175MHz
Collector current: 1A
Mounting: SMD
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 60V
Power dissipation: 2.47W
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 60V; 1A; 2.47W
Case: U-DFN2020-6
Polarisation: bipolar
Kind of transistor: complementary pair
Pulsed collector current: 1.5A
Type of transistor: NPN / PNP
Current gain: 70...430
Kind of package: reel; tape
Frequency: 90...175MHz
Collector current: 1A
Mounting: SMD
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 60V
Power dissipation: 2.47W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH