DSS45160FDB-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: TRANS NPN/PNP 60V U-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V
Frequency - Transition: 175MHz, 65MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.32 EUR |
| 6000+ | 0.3 EUR |
| 9000+ | 0.28 EUR |
| 15000+ | 0.27 EUR |
| 21000+ | 0.26 EUR |
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Technische Details DSS45160FDB-7 Diodes Incorporated
Description: TRANS NPN/PNP 60V U-DFN2020-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 405mW, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V, Frequency - Transition: 175MHz, 65MHz, Supplier Device Package: U-DFN2020-6 (Type B), Part Status: Active.
Weitere Produktangebote DSS45160FDB-7 nach Preis ab 0.3 EUR bis 1.36 EUR
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DSS45160FDB-7 | Hersteller : Diodes Incorporated |
Description: TRANS NPN/PNP 60V U-DFN2020-6 Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 405mW Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V Frequency - Transition: 175MHz, 65MHz Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active |
auf Bestellung 48000 Stücke: Lieferzeit 10-14 Tag (e) |
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DSS45160FDB-7 | Hersteller : Diodes Incorporated |
Bipolar Transistors - BJT SS Low Sat Transistor |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DSS45160FDB-7 | Hersteller : DIODES INCORPORATED |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 60V; 1A; 2.47W Case: U-DFN2020-6 Collector current: 1A Pulsed collector current: 1.5A Power dissipation: 2.47W Collector-emitter voltage: 60V Current gain: 70...430 Quantity in set/package: 3000pcs. Polarisation: bipolar Frequency: 90...175MHz Kind of transistor: complementary pair Type of transistor: NPN / PNP Kind of package: reel; tape Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DSS45160FDB-7 | Hersteller : DIODES INCORPORATED |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 60V; 1A; 2.47W Case: U-DFN2020-6 Collector current: 1A Pulsed collector current: 1.5A Power dissipation: 2.47W Collector-emitter voltage: 60V Current gain: 70...430 Quantity in set/package: 3000pcs. Polarisation: bipolar Frequency: 90...175MHz Kind of transistor: complementary pair Type of transistor: NPN / PNP Kind of package: reel; tape Mounting: SMD |
Produkt ist nicht verfügbar |