Produkte > DIODES INCORPORATED > DSS45160FDB-7
DSS45160FDB-7

DSS45160FDB-7 Diodes Incorporated

DSS45160FDB.pdf Hersteller: Diodes Incorporated
Description: TRANS NPN/PNP 60V U-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V
Frequency - Transition: 175MHz, 65MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.32 EUR
6000+0.3 EUR
9000+0.28 EUR
15000+0.27 EUR
21000+0.26 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DSS45160FDB-7 Diodes Incorporated

Description: TRANS NPN/PNP 60V U-DFN2020-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 405mW, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V, Frequency - Transition: 175MHz, 65MHz, Supplier Device Package: U-DFN2020-6 (Type B), Part Status: Active.

Weitere Produktangebote DSS45160FDB-7 nach Preis ab 0.33 EUR bis 1.64 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DSS45160FDB-7 DSS45160FDB-7 Hersteller : Diodes Incorporated DSS45160FDB.pdf Description: TRANS NPN/PNP 60V U-DFN2020-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 50mA, 1A / 550mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 2V / 120 @ 500mA, 2V
Frequency - Transition: 175MHz, 65MHz
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.36 EUR
22+0.84 EUR
100+0.54 EUR
500+0.42 EUR
1000+0.38 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
DSS45160FDB-7 DSS45160FDB-7 Hersteller : Diodes Incorporated DSS45160FDB.pdf Bipolar Transistors - BJT SS Low Sat Transistor
auf Bestellung 736 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.64 EUR
10+1.01 EUR
100+0.61 EUR
500+0.47 EUR
1000+0.42 EUR
3000+0.33 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
DSS45160FDB-7 Hersteller : DIODES INCORPORATED DSS45160FDB.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 60V; 1A; 2.47W
Mounting: SMD
Case: U-DFN2020-6
Power dissipation: 2.47W
Collector current: 1A
Pulsed collector current: 1.5A
Collector-emitter voltage: 60V
Current gain: 70...430
Quantity in set/package: 3000pcs.
Frequency: 90...175MHz
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: complementary pair
Type of transistor: NPN / PNP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH