auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.25 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DSS5160FDB-7 Diodes Zetex
Description: TRANS 2PNP 60V 1A U-DFN2020-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 405mW, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 550mV @ 50mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V, Frequency - Transition: 65MHz, Supplier Device Package: U-DFN2020-6 (Type B).
Weitere Produktangebote DSS5160FDB-7 nach Preis ab 0.29 EUR bis 1.51 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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DSS5160FDB-7 | Hersteller : Diodes Incorporated |
 Description: TRANS 2PNP 60V 1A U-DFN2020-6Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 405mW Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 550mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 65MHz Supplier Device Package: U-DFN2020-6 (Type B) |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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DSS5160FDB-7 | Hersteller : Diodes Incorporated |
Bipolar Transistors - BJT SS Low Sat Transistor |
auf Bestellung 2156 Stücke: Lieferzeit 10-14 Tag (e) |
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DSS5160FDB-7 | Hersteller : Diodes Incorporated |
Description: TRANS 2PNP 60V 1A U-DFN2020-6 Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 405mW Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 550mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 65MHz Supplier Device Package: U-DFN2020-6 (Type B) |
auf Bestellung 11888 Stücke: Lieferzeit 10-14 Tag (e) |
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DSS5160FDB-7 | Hersteller : Diodes Zetex |
Trans GP BJT PNP 60V 1A 6-Pin UDFN EP T/R |
Produkt ist nicht verfügbar |
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DSS5160FDB-7 | Hersteller : Diodes Inc |
Trans GP BJT PNP 60V 1A 6-Pin UDFN EP T/R |
Produkt ist nicht verfügbar |
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| DSS5160FDB-7 | Hersteller : DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 60V; 1A; 2.47W; U-DFN2020-6 Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Current gain: 70...170 Collector current: 1A Pulsed collector current: 1.5A Type of transistor: PNP x2 Power dissipation: 2.47W Polarisation: bipolar Quantity in set/package: 3000pcs. Frequency: 65MHz Collector-emitter voltage: 60V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DSS5160FDB-7 | Hersteller : DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 60V; 1A; 2.47W; U-DFN2020-6 Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Current gain: 70...170 Collector current: 1A Pulsed collector current: 1.5A Type of transistor: PNP x2 Power dissipation: 2.47W Polarisation: bipolar Quantity in set/package: 3000pcs. Frequency: 65MHz Collector-emitter voltage: 60V |
Produkt ist nicht verfügbar |