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DSS60601MZ4Q-13

DSS60601MZ4Q-13 Diodes Incorporated


DIOD_S_A0008533997_1-2543034.pdf Hersteller: Diodes Incorporated
Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 2.5K
auf Bestellung 1770 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
41+1.28 EUR
48+ 1.09 EUR
100+ 0.8 EUR
500+ 0.63 EUR
1000+ 0.48 EUR
2500+ 0.4 EUR
10000+ 0.37 EUR
Mindestbestellmenge: 41
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Technische Details DSS60601MZ4Q-13 Diodes Incorporated

Description: TRANS PNP 120V 0.7A MPT3, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 360mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 1µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V, Frequency - Transition: 300MHz, Supplier Device Package: MPT3, Part Status: Active, Current - Collector (Ic) (Max): 700 mA, Voltage - Collector Emitter Breakdown (Max): 120 V, Power - Max: 500 mW.

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DSS60601MZ4Q-13 Hersteller : Diodes Inc dss60601mz4q.pdf Pwr Mid Perf Transistor SOT223 T&R 2.5K
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DSS60601MZ4Q-13 DSS60601MZ4Q-13 Hersteller : Diodes Incorporated DSS60601MZ4Q.pdf Description: TRANS PNP 120V 0.7A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
Produkt ist nicht verfügbar