DTA114GKAT146 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: TRANS PREBIAS PNP 200MW SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.079 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DTA114GKAT146 Rohm Semiconductor
Description: TRANS PREBIAS PNP 200MW SMT3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V, Supplier Device Package: SMT3, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 10 kOhms.
Weitere Produktangebote DTA114GKAT146 nach Preis ab 0.087 EUR bis 0.48 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DTA114GKAT146 | Hersteller : Rohm Semiconductor |
 Trans Digital BJT PNP 50V 100mA 3-Pin SMT T/R |
auf Bestellung 1970 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
DTA114GKAT146 | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS PNP 200MW SMT3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: SMT3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms |
auf Bestellung 5890 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
DTA114GKAT146 | Hersteller : Rohm Semiconductor |
Trans Digital BJT PNP 50V 100mA 3-Pin SMT T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||
| DTA114GKAT146 | Hersteller : ROHM Semiconductor |
Bipolar Transistors - Pre-Biased PNP 50V 100MA |
Produkt ist nicht verfügbar |